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- Thermodynamic analyses for the superhard inorganic material, such as SiC, Si 3N 4,TiC,TiN and so on, nanosized powder CVD synthesis processes were made systematically. 通过热力学分析研究了超硬无机材料，如SiC、Si3N4、TiC、TiN等纳米粉末的化学气相沉积（CVD）合成反应过程和核化过程的有关热力学规律。
- The diamond films doped with boron were synthesized on the Si 3N 4 substrate by microwave plasma CVD method (MPCVD). 采用微波等离子体化学气相沉积 ( MPCVD)的方法在 Si3N4 基片上制作了掺硼金刚石薄膜。
- It is proved that electroless composite plating Ni P Si 3N 4 on piston ring is a new technology,which is worth application and dissemination. 结果表明：活塞环化学复合镀Ni－P－Si3N4是一种值得推广应用的新型工艺方法。
- Research results show that composite aids are more effective than single aids to sintered Si 3N 4 ceramics, in which the rare-earth oxides and MgO-Al 2O 3-SiO 2 composite aids are more attractive. 研究表明 ,多组分助剂比单一组分助剂对氮化硅的助烧效果好 ,其中稀土氧化物和MgO -Al2 O3 -SiO2 体系比较受重视
- For sake of probing the possibility of CVD at room temperature by way of laser plasma assisted technique, a new style of CVD device has been designed and manufactured, and was used on practical preparation of Si 3N 4 film from SiH 4 NH 3 N 2 system. 为探索用激光和等离子体共同辅助化学气相沉积（CVD）过程以实现室温沉积的可能性，设计并制造了一种新型的CVD装置，实际进行了由SiH4－NH3－N2体系制取Si3N4膜的试验。
- The studies of IR and Raman show that there are Si-N ,Si-H,N-H,Si-O-Si bonds in a Si 3N 4.An analysis of Raman spectra of a Si 3N 4 for thermal treatment in various temperature and atmosphere are made. 红外吸收和拉曼光谱研究表明，a－Si3N4纳米粒子中存在Si－N，Si－H，N－H，Si－O－Si键，分析了a－Si3N4纳米粒子在不同的温度和气氛退火后的变化情况。
- Keywords Si 3N 4;ceramic target;armour piercer;impacting and biting; 氮化硅;陶瓷靶;穿甲弹;侵彻;
- THE AUTOMATIC CRYSTALLIZATION OF MgO DURING THE SINTERING OF Si 3N 4 MgO CeO 2 CERAMICS Si_3N_4－MgO－CeO_2陶瓷烧结过程中MgO的自动析晶
- SiO 2 and only a little of Si 3N 4 are found in the ceramic with aluminum as sintering aid; 以Al粉作烧结助剂时 ,试样的主要成分是SiO2 ,仅有少量Si3N4 存在 ;
- Keywords electroless plating;Si 3N 4;Co-P alloy coating;metal composited ceramic powder; 化学镀;氮化硅;钴磷合金膜;金属复合陶瓷粉;
- Keywords Si 3N 4 base composite ceramics;whisker;nona grain;propagating of crack; 4基复合陶瓷;晶须;纳米颗粒;裂纹扩展;
- Ultra-thin Si 3N 4/SiO 2(N/O) stack gate dielectric with EOT of 2.1nm is fabricated successfully,and its characteristics are investigated. 成功制备了EOT(equivalentoxidethickness)为 2 1nm的Si3 N4/SiO2 (N/O)stack栅介质 ;并对其性质进行了研究 .
- Current research on these materials concentrates on diamond, cubic boron nitri de(cBN), carbon nitride(C 3N 4, CN x), boron carbonitride(BCN)and diamond like carbon(DLC). 新型超硬薄膜材料研究从金刚石开始 ;目前主要的研究对象有金刚石、类金刚石碳 (DLC)、立方氮化硼 (cBN)、氮化碳 (C3N4 ;CNx)、硼碳氮 (BCN)等 ;是近二十年来材料研究的热门方向之一 .
- Keywords C 3N 4;ultrahard thin film;MPCVD; 超硬薄膜;微波等离子体化学气相沉积;
- Keywords C 3N 4;MPCVD;thin film deposition;ultrahard materials; 微波等离子体化学气相沉积法;薄膜沉积;超硬材料;
- The Effects of Nitrogen and Powder Bed (Si 3N 4+BN+SiO 2) on the Phase Composition of ZrO 2 氮气及Si_3N_4＋BN＋SiO_2埋粉对ZrO_2相组成的影响
- Visiting time in this hospital is from 4 to 6. 这家医院的探望时间是从4点到6点。
- Let it be 4:25 tomorrow afternoon. 就定明天下午4点25分吧。
- This is also Si Kaila the 4 day of 3rd goal. 这也是斯凯拉4天来的第3个进球。
- A monthly is more economical than 4 weeklies. 一张月票比四张周票上算。
