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- UHV/CVD Si epitaxial growth on porous silicon has been reported. 报道了采用超高真空化学气相淀积 ( UHV/CVD)在多孔硅层上的单晶硅外延技术 .
- In this paper,I suggest the integration ?C V? method that is applicable to measuring Si epitaxial layer resistivity of homogeneity with impurity longitudinal distribution. 本文提出了积分C-V法,它适用于杂质纵向分布均匀的外延层电阻率的测量,该方法简便。
- In this thesis, by using the Si electron beam evaporator (EBE) and UHV MBE system which are developed and set up by ourselves, a flat and crystalline Si epitaxial film has been obtained on Si substrate. 本论文利用自主研发的Si电子束蒸发器和建立的分子束外延设备,在Si衬底上外延生长出了表面平整的Si单晶薄膜。
- In this paper, the area contact model of depletion layer width under avalanche breakdown in Si epitaxial wafer by a three-probe method is analysed. The theory accords with experimental results. 本文分析了三探针测试硅外延片中雪崩击穿时耗尽层宽度的面接触模型,理论和实验结果吻合。
- Si epitaxy 硅外延
- That can never be achieved through the si da. “四大”就决不能做到这一点。
- We have grown PbTe films on Si(111) and Si (100) substrates by using Hot Wall Epitaxy (HWE) technology. 我们采用热壁外延(Hot Wall Epitaxy,缩写为HWE)技术,在Si(111)和Si(100)衬底上外延生长PbTe薄膜。
- Next, the epitaxy substrate is removed. 然后,移除磊晶基板。
- So, what does the future hold for SI systems? 所以,谁会主宰合成仪器系统的未来?
- Civil service pension si index- link. 文职人员退休金是与生活指数挂钩。
- Hi. This si Peter from Dr. Alice's office. 嗨,你好,我是埃里斯诊所的彼得。
- Guangzhou Si Wery Boat Food Co., Ltd. 广州市新蜜宝食品有限公司
- And and and and tell us Stephen, how is uncle Si? 还有,还有,还有,斯蒂芬,告诉我们西[33]姑父好吗?
- "Did you hear what Ah Si just said? “师傅,听得阿四的话么?
- Si John ay hindi kasindunong ni Peter. 约翰不如彼得聪明。
- The higher value is comparable to those obtained in CVD epitaxy. 这个高的数值可以和从化学气相淀积外延得到的数值相比拟。
- The Si unit for length is the meter, m. 长度的SI单位是米(m)。
- SI HUI ZUN FU WOOD INDUSTRIAL CO., LTD. 四会尊福木业有限公司。
- Benessere: ooo! It's one of the best si. 瑞瑞:祝你幸福。
- GuangZhou ai pu si transport service Co. 广州爱普司运输服务有限公司。