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- Raman Spectra of Undoped and Doped ZnO Thin Films 掺杂和未掺杂氧化锌薄膜的拉曼光谱
- Mn doped ZnO thin films 锰掺杂氧化锌薄膜
- Doped ZnO thin films 掺杂ZnO薄膜
- doped ZnO thin film 掺杂ZnO薄膜
- Gas sensing property of the film was investigated at different concentration of CO gases and results show that 0.5% Al3+ doped ZnO(mol/mol) thin film shows a maximum sensitivity to CO gas. The gas sensitivity mechanism of ZnO is also discussed. 在室温下;对薄膜在不同浓度的CO气体下的敏感特性进行了研究;随着气体浓度的增加;薄膜电阻值逐渐减小; 随着掺Al量的增大;气敏灵敏性先逐渐增大后减小;发现当铝含量为r(Al:ZnO)=0.;5%25时;对CO气体的灵敏度最大;并对紫外光照射下气敏半导体薄膜的气敏机理进行了简单分析。
- Al-doped ZnO thin films were fabricated on glass substrates by solgel method. 采用溶胶-凝胶工艺在普通玻璃片上制备了掺铝氧化锌薄膜。
- Smooth ZnO thin films have been obtained by in situ oxidation of Zinc films on mica surfaces. 摘要在云母基底上热蒸镀锌膜，再采用简单的原位氧化方法制备氧化锌薄膜。
- In situ RHEED observation and HRXRD measurement demonstrated that no rotation domains exist and the as-grown ZnO thin films are of O unipolarity. RHEED原位观察和HRXRD测试表明没有旋转畴的存在，该薄膜为单一O极性。
- Then, we compare the nano-structures of three samples of ZnO thin films grown on GaN with different growth temperature conditions. 然后，我们将三种在不同长晶温度的条件下，以氮化镓为基底所成长的氧化锌薄膜结构进行比较。
- It was indicated by SEM spectra of ZnO thin films that the surface of the sample was leveled off, and the crystals were felsitic. 结果表明，对于ITO薄膜，薄膜的光电性能薄膜结构的择优取向性和与衬底温度、溅射氧气压等工艺参数有很大关系，ITO薄膜的SEM表明，样品表面较平整，且晶粒也比较致密。
- ZnO is a II-VI semiconductor material with wide band-gap, which has hexagonal wurtzite structure. ZnO thin films were widely applied in solar cell, UV detector, SAW device, gas sensor and transparent electrodes et al for their excellent properties. 氧化锌(ZnO)是一种具有六方纤锌矿晶体结构的宽禁带II-VI族半导体材料,由于其优良的特性,在太阳能电池、紫外探测器、声表面波器件、气敏传感器、透明电极等方面得到了广泛的应用。
- ZnO thin films can be deposited by various methods, such as sputtering, e-beam evaporation, spray pyrolysis, sol-gel, pulsed laser deposition (PLD), metalorganic vapor phase epitaxy (MOVPE), molecular beam epitaxy (MBE), atomic layer epitaxy (ALE), etc. 制备ZnO薄膜的方法有很多，包括：溅射方法(sputtering)、金属有机气相外延(MOVPE)、分子束外延(MBE)、脉冲激光沉积(PLD)、原子层外延(ALE)、等离子体加强化学气相沉积(PECVD)、溶胶-凝胶法(soll-gel)、喷涂热解法(spray pyrolysis)、电子束蒸发法(e-beam evaporation)等等。
- Experiments reveal that the Ga wetting layer suppresses completely the formation of rotation domains and inversion domains which are the main causes of the quality degradation of ZnO thin films. 实验发现，Ga薄层的引入完全抑制了导致ZnO薄膜质量下降的旋转畴和倒反畴的形成。
- The interaction among fabrication of ZnO pyroelectric sensors, morphology, crystal structures and mechanical properties of ZnO thin films to improve the responsivity was presented in this study. 因此探讨氧化锌薄膜的机械性质、结晶构造及表面型态以改善氧化锌焦电薄膜感测器之响应则是本文研究重点。
- In this paper, the Al3+-doped ZnO thin films were deposited on substrates by sol-gel method from 2-methoxyethanol solutions prepared by Zinc acetate as precursor, DEA as stabilizer. 本文采用溶胶-凝胶方法在载玻片上成功地制备出Al3+掺杂型ZnO薄膜。
- Al doped ZnO(AZO) thin films AZO薄膜
- Effects of Anneal on Properties of ZnO Thin Films 退火对ZnO薄膜质量的影响
- Preparation of ZnO Thin Film Schottky Barrier Diode ZnO薄膜肖特基二极管的研制
- N doping ZnO 氮掺杂ZnO
- Kamalasanan M N，Chandra S。 Sol-Gel synthesis of ZnO thin films 。thin solide films ， 1996;288:112 林碧霞，傅竹西，贾云波，非掺杂氧化锌薄膜中紫外与绿光发光中心。物理学报。2001，50
