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- 报道了InP衬底AlAs/In0.53Ga0.47As/AlAs两垒一阱结构共振隧穿二极管(RTD)器件的研制.The research and fabrication of an InP-based AlAs/In0.53Ga0.47As double barrier single well resonant tunneling diode(RTD)device are reported.
- InP衬底InP substrate
- InP衬底AlAs/In_(0.53)Ga_(0.47)As RTD的研制Research on InP-Based AlAs/In_(0.53)Ga_(0.47)As RTD
- InP衬底GaAs张应变层上InAs量子点的原子力显微镜分析AFM Analysis of InAs Quantum Dots on GaAs Tensile Strained Layer on InP Substrate
- 衬底妇女紧身胸衣A foundation garment.
- 衬底点阵substrate lattice
- 衬底漏电substrate leakage
- 衬底强度substrate strength
- 共衬底common substrate
- 衬底平行度substrate parallelism
- 衬底切割锯substrate dicing saw
- 有源衬底active substrate
- 软衬底soft substrate
- 铝衬底aluminum substrate
- Si衬底Si substrate
- AAO衬底AAO substrate
- 陶瓷衬底釉ceramic substrate glaze
- 互连层衬底interconnection substrate
- ITO衬底ITO substrate
- 小衬底narrow filling