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- high k dielectric film 高k栅介质
- High-k HfON dielectric film 高kHfON介电薄膜
- High k dielectric HfO 2 films were deposited on p type Si(100) substrates by e beam evaporation. 使用高真空电子束蒸发在p型Si(1 0 0 )衬底上制备了高kHfO2 薄膜 .
- The equivalent oxide thickness (EOT) of an HfO_2 high k dielectric is extracted in two steps. 分两步提取了HfO2高k栅介质等效氧化层厚度(EOT).
- NTBI induced device degradation can be suppressed by a SiN capping layer between Poly-Si gate and high k dielectric layer. 在闸极与高介电常数介电层间使用氮化矽可有效抑制负偏压温度不稳定性的现象。
- Second,an approach using flat-band capacitance is demonstrated for extracting the EOT of a high k dielectric,without the effects of inversion or accumulation capacitance. 其次;给出了一种利用平带电容提取高k介质EOT的方法;该方法能克服量子效应所产生的反型层或积累层电容的影响.
- For continued technology scaling, high k materials are required to replace SiO_2 as gate dielectric in the next generation metal oxide field effect transistors (MOSFET). 在过去二十多年里,Si基元器件的大小遵循Moore定律按比例的持续减小。 对于下一代金属氧化物半导体场效应管(MOSFET)器件,原来的栅极介电材料SiO_2已经不再适合使用。
- FSG, as one kind of low k dielectric film, is very similar with SiO2 in structure and deposition, and can be well used in 0.18-0.13um ULSL. 氟掺杂的氧化硅玻璃（FSG）作为低介电常数材料的一种，它的制备工艺、结构和性能更接近二氧化硅，足以满足0.;18微米甚至0
- The mirrors here are coated with a multilayered dielectric film having a reflectance of over 99%. 这儿的反射镜上镀了一层多层介质膜，因而反射比超过99%25。
- Device Processing: Etching. Surface passivation; dielectric films. 元件制程：蚀刻，表面钝化，介电材料薄膜。
- Device Processing : Etching. Surface passivation; dielectric films. 元件制程：蚀刻，表面钝化，介电材料薄膜。
- A high K ratio method for fatigue precracking in welding position toughness specimen of thick steel plate was developed. 提出了预制厚钢板焊缝断裂韧度试样疲劳裂纹的“高K比法”。
- A method of manufacturing a flash memory device that prevents generation of voids when forming an interlayer dielectric film. 一种制造闪速存储器件的方法，其防止在形成层间介电薄膜时产生空隙。
- Intel's new design uses what is known as high K metal gate technology. But IBM made a similar announcement on the same day as Intel. 英特尔的新设计使用的是大家所知道的“高K金属门”技术。但是，IBM公司也在同一天作了类似的宣布。
- VoL-canic rocks and subvolcanic rocks related with metallogenesis are characteristic of rich Si,poor Fe,high K and low Na. 与成矿有关的火山岩、次火山岩具有富硅、贫铁、高钾、低钠特点。
- A coating of the sol material according to the invention can be directly cured (without aging) to obtain a microporous dielectric film without shrinkage or cracks. 依本发明之剂型溶胶溶液进行镀膜，可不经过老化过程直接进行固化，即可得到一无裂痕且具有孔隙之介电膜。
- Preparation of metallic and some dielectric films in thickness of nanometers. 纳米量级的金属薄膜及部分介质薄膜的制备。
- Keywords High k materials;Gate dielectric;Molecular beam epitaxy;HfO_2;Er_2O_3; 高k材料;栅介质;分子束外延;二氧化铪;三氧化二饵;
- Discussion shows that the barrier height of Sn/Au HgCdTe contact is pinned at "Bardeen limit" and the interface state density is one magnitude higher than that of the dielectric film HgCdTe interface. 结果表明 ,Sn/Au金属膜 -碲镉汞薄膜 PN器件的电极界面的势垒高度锁定在“Bardeen”限 ,界面密度比介质膜 -碲镉汞的大一个量级
- The synthesis, structure, properties and process interaction of low k dielectrics are reviewed.Characterization techniques for low k dielectric films are summarized. 综述了低介电常数介质薄膜的制备方法、结构与性能表徵、工艺兼容性等领域的最新进展。
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- 深远海浮式风电平台 - deep-sea floating wind power platform
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- 农业及相关产业增加值 - the added value of agriculture and related industries
