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- Deposition of High Quality GaN Film Under High ECR Plasma Density ? 在高ECR 等离子体密度下沉积高质量氮化镓薄膜(英文)
- Recent advances in heteroepitaxial growth of high quality GaN films by MOCVD and HVPE is reviewed. 介绍了采用MOCVD或HVPE技术高质量异质外延生长GaN薄膜的发展状况。
- T he epitaxially lateral overgrowth of GaN on SiO 2 areas is realized and a plana r ELO GaN film is obtained. 在SiO2 衬底上侧向外延生长GaN已经实现 ,并得到了平面的ELOGaN薄膜。
- High quality GaN film was grown by hydride vapor phase epitaxy(HVPE) using porous AAO as mask. 采用均匀的多孔阳极氧化铝做掩膜在氢化物气相外延设备中生长出高质量的氮化镓膜。
- Photoluminescence spectra and photoluminescence excitation spectra for the light emission of around 2.25 eV from undoped and C doped GaN films grown by HVPE are measured. 测量了氢化物气相外延方法生长的非特意掺杂和掺碳GaN外延膜的光致发光谱 ;并在光致发光谱峰位2 .;2 5eV(5 5 0nm)附近分别测量了光致发光激发谱;对两者进行了比较
- The microstructure and optical properties of epitaxial laterally overgrown (ELO) GaN films on Si (III) substrate by hydrade vapor phase epitaxy (HVPE) have been investigated. 用氢化物气相外延 (HVPE)方法在Si(III)衬底上成功横向外延生长出晶体质量较好的GaN薄膜材料。
- We find a reduction in TD density in GaN films grown on graded AlxGa1-xN buffer layers, in comparison with those grown directly on a thin AlN buffer layer. 与那些直接生长在AlN薄膜上的GaN薄膜相比，生长在组分渐变的AlxGa1-xN 缓冲层上的GaN薄膜内具有更少的螺位错密度。
- Pioneer investigation on instantaneous relaxation behavior of photoconductivity in GaN film grown on vicinal sapphire substrate by MBE is presented in this thesis. 本文首次研究了蓝宝石邻晶面衬底RF-MBE生长GaN薄膜的瞬态光电导弛豫特性。
- Raman spectra and Photoluminescence spectra are used to investigate the influence of carbon doping on the structural and optical properties of GaN films grown by the hydride vapor phase epitaxy (HVPE). 利用喇曼光谱和光致发光谱 ;对采用氢化气相外延淀积方法在MOCVDGaN衬底上生长的掺碳GaN样品的光学性质进行了研究 .
- The indium assistant growth was adopted for the first time to grow GaN film by HVPE, and the crystalline quality and surface morphology of the epi-layer were improved by using this method. 首次在HVPE中采用In辅助外延生长GaN薄膜，使外延层表面变得更加光滑平整，结晶质量也有所提高；
- By optimizing the MBE technique and conditions experimentally, we grew the improved GaN film on vicinal sapphire (0001) substrates by radio frequency plasma-assisted molecular beam epitaxy. 在实验优化MBE工艺条件的基础上，采用蓝宝石（0001）邻晶面衬底制备出了具有较高质量的GaN薄膜。
- This dissertation presents a systematical investigation of the approaches to improve the GaN film quality on the basis of film growth theory created by Burton, Cabrera, and Frank (BCF theory). 本文基于薄膜生长BCF理论系统研究了提高GaN薄膜生长质量的途径。
- New York City's Third Avenue is full of gin mills. 纽约市第3大街上小酒吧林立。
- A study on Raman scattering spectra of GaN film GaN薄膜拉曼散射光谱的研究
- That was infinitely better than his last film. 这比他上一部电影不知胜过多少倍。
- I'd like a gin and orange please. 请来一杯橙汁杜松子酒。
- They sank a bottle of gin between them. 他们俩喝了一瓶杜松子酒。
- A gin is a machine to separate seeds from cotton. 轧棉机是把棉籽从棉花里分离出来的机器。
- She has a book full of cuttings about her film. 她有一本书贴满了关于她的一些影片的剪报。
- She loves old Humphrey Bogard films. 我非常喜欢老演员亨弗莱鲍嘉主演的电影。
