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Dual work function metal gate 纳米技术发展过程中采用双功函数金属栅
low work function metal 低逸出功金属
Working function is variant from request of boss. 工作职责与上司的要求不一致。
With no one watching, they fled past the metal gate which was the door to the Underworld. 在无人看管的情况下，他们经过阴间的金属门，逃出了阴间。
Red Valve was also able to solve one of DSW's major concerns with replacing its metal gate valves. 美国红阀公司还能够解决以色列死海工程公司最希望解决的另一个难题。
This paper studies the second development technology of VBA based on AutoCAD and develops the visual FEM system of the metal gate. 研究了基于AutoCAD平台的VBA二次开发技术，进行了金属闸门可视化空间有限元分析系统的开发。
UPS and the changes of work function on GaAs (110) adsorbed by different amount of Cl are obtained. 测量了吸附不同量的氯后GaAs(110)表面UPS谱及功函数的变化。
Intel's new design uses what is known as high K metal gate technology. But IBM made a similar announcement on the same day as Intel. 英特尔的新设计使用的是大家所知道的“高K金属门”技术。但是，IBM公司也在同一天作了类似的宣布。
DSW considered several alternatives to the metal gate valves and decided on the Type A Air-Operated Megaflex Pinch Valve from Red Valve. 经过对比几种替代金属闸阀的备选方案后，以色列死海工程公司最后决定采用美国红阀公司制造的A型气动Megaflex夹管阀。
The improvement field emission by Hf coating on CNTs surface is attributed to the low work function, chemical inertness and good conductivity of HfC. 我们认为碳纳米管表面发射性能的提高归功于表面碳化铪膜良好的导电性、学惰性和低逸出功。
Due to the downscaling of device dimensions in CMOS technology, the metal gate electrodes will be required to replace conventional Poly-silicon gate. 摘要传统多晶硅栅已不能适应CMOS器件尺寸进一步减小的要求，因此需要金属栅极材料来取代多晶硅。
CNTs has a high aspect ratio, low work function, good electrical conductivity and nanometer tip, which can emit electrons at low voltage. 尤其是它具有大的长径比，低的功函数，良好的导电性和纳米级的尖端，使其能够在相对较低的电压下就能长时间地发射电子，因此被认为是一种优良的场致发射阴极。
All the time the dual working of my mind distracted me almost to the point of insanity. 我脑中那种有双重存在在活动的感觉一直折磨着我，几乎使我神经错乱。
The improvement field emission by Hf coating on CNTs surface is attributed to the low work function,chemical inertness and good conductivity of HfC. 我们认为碳纳米管表面发射性能的提高归功于表面碳化铪膜良好的导电性、化学惰性和低逸出功。
And it should also be noted that the TDDB properties and lifetime of refractory metal gate capacitors with thinner EOT are better than those of polysilicon gate capacitors. 进一步研究发现具有更薄EOT的难熔金属栅电极PMOS电容在TDDB特性以及寿命等方面均优于多晶硅栅电极的相应结构.
The place is surrounded by dense trees and shrubbery, so all you can see from the road is a driveway with an anonymous, but tasteful, wood and metal gate. 这地方被浓密的树群及灌木丛环绕，所以你从街上只能看见一条车道和一个不具特色、但很有品味的木头与金属大门。
Band gap width of sulfide mineral, work function, adsorption of reagents, solution property and ion streng th of solution can affect edge level of sulfide mineral. 矿物的禁带宽度、功函数、药剂吸附、溶液性质以及离子强度等因素能够改变矿物边缘能级的大小。
By controlling the depth of side etching of metal gate and the length of CNTs, the ability of increasing anode currents and reducing gate leakage currents could be realized. 控制金属闸极侧吃的深度和奈米碳管的长度，进而达到增加阳极电流的控制能力并减少闸极的漏电流。
In Ni/Au/ITO system, In atoms in ITO may form alloy with Au and leading to the reduction of the contact work function since the work function of In is low. 在镍/金/氧化铟锡系统中，氧化铟锡中铟原子可能会与金反应形成合金，降低接触的功函数。
To overcome this problem, the conductive poly-Si is replaced by discrete trapping nitride to form the [poly-Si or metal gate]-SiO2-SiN-SiO2-Si SONOS or MONOS memory. 其主要原因为反覆的编码和抹除过程将会对穿遂氧化层造成应力而产生缺陷，这些缺陷可能形成漏电路径而导致多晶矽全面性的漏电。