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- H.-Y.Chen and F.-H.Lu, “Phase Transformation in Chromium Nitride Films,” International Conference on Metallurgical Coatings and Thin Films (2002) San Diego, U.S.A. 陈弘颖、吕福兴,“氮化铬镀膜于高温真空下的相变化,”中国材料科学学会年会(2002)台北。
- Chromium nitride film 氮化铬膜
- The feasibility is expounded of prod ucing chromium nitride with materia l chromium powders by solidifying pr o-cess. 论述了以金属铬粉为原料采用固态法生产氮化金属铬的可行性。
- It is also used as the etchant for etching Aluminum and Silicon Nitride film in semi-silicon IC. 在硅平面晶圆集成电路生产中,用于铝及氮化硅的蚀刻;
- It shows that even if using the RF power(13.56 MHz) as the excitation of plasma,the compressive silicon nitride film can be obtained easily. 通常认为高频下制备得到的氮化硅膜呈现张应力;但是通过实验;表明即使应用高频(13.;56MH z)作为激励源同样可以沉积出呈现压应力的氮化硅薄膜。
- titanium aluminum chromium nitride 氮化钛铝铬
- Synthesis and VioletLuminescence Mechanism of Hexagonal Monocrystal Aluminum Nitride Films[J]. 引用该论文 吕惠民;陈光德;耶红刚;颜国君.
- Deposition of chromium nitride coatings by arc ion plating (AIP) 电弧离子镀氮化铬涂层的沉积工艺研究
- Keywords ammonolysis synthesis;chromium nitride;ultra-fine powders; 氨解合成;氮化铬;超细粉体;
- AES INVESTIGATION OF SILICON NITRIDE FILM 氮化硅薄膜的AES研究
- It was verified that the layer is composed by chromium nitrides precipitates and essentially expanded austenite nitrogen rich and with hardness around 850 HV. 结果证明,等离子氮碳共渗层由氮化铬析出相和富氮奥氏体基体组成,其硬度约850HV;
- Titanium nitride films were grown by unbalanced magnetron sputtering at different N2 and Ar partial pressure ratios on Ti6Al4V alloy substrate. 采用非平衡磁控溅射技术,在钛合金(Ti6Al4V)表面沉积氮化钛薄膜。 通过改变氮气和氩气分压比(PN/PAr)和基体偏压,制备出不同结构、性能的氮化钛薄膜。
- From X-ray photoelectron spectroscopy (XPS) experiments, the presence of Si clusters in the silicon nitride films was confirmed. 对不同富矽量的氮化矽薄膜做了红外和光致发光的比较研究。
- This paper describes the study on the component and structure of the silicon oxide and silicon nitride films by infra-red absorbed spectrum. 利用红外吸收谱等微观分析对氧化硅和氨化硅薄膜的成分和结构进行了研究。
- That was infinitely better than his last film. 这比他上一部电影不知胜过多少倍。
- I am going to rub up the chromium on the car. 我准备把汽车上的镀铬部件擦亮。
- Titanium nitride films were deposited on silicon(100) substrate at room temperature with various substrate bias voltages (corresponding to various impact energy) by energetic cluster impact (ECI). 在室温下,以硅(100)为衬底,在不同的衬底偏压(即团簇不同碰撞能量)的条件下,用荷能团簇碰撞沉积方法制备了TiN薄膜。
- She has a book full of cuttings about her film. 她有一本书贴满了关于她的一些影片的剪报。
- He has composed a suite of music for the film. 他为该电影配写了一套乐曲。
- Microfabrication of silicon nitride film applied in microsensor 微型传感器中氮化硅薄膜的微加工技术
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