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- CZ-Si单晶CZ-Sicrystal
- p-Si单晶低表面复合速度的获得Acquisition of Low Surface Recombination Velocity on Surface of p-type Si
- 采用Lange式透射X射线形貌照相法研究了电解充氢导致Fe-3wt-%Si单晶中氢损伤的规律。The formation and aggravation of hydrogen damage in Fe-3wt-%25Si alloy during cathodic charging were studied by means of Lange transmission X-ray topography.
- 本论文利用自主研发的Si电子束蒸发器和建立的分子束外延设备，在Si衬底上外延生长出了表面平整的Si单晶薄膜。In this thesis, by using the Si electron beam evaporator (EBE) and UHV MBE system which are developed and set up by ourselves, a flat and crystalline Si epitaxial film has been obtained on Si substrate.
- 用6MeV F离子束辐照了淀积在Si单晶基底上的Sb、Ag、Cu、Pd和Ni金属薄膜,并用胶带法对不同辐照剂量的各点进行了增强附着阈剂量的测量。Sb, Ag, Cu, Pd and Ni films deposited on Si substrates were irradiated with 6 MeV F ions. The Scotch tape test was employed to measure adhesion changes as a function of dose.
- 单晶炉single crystal furnace
- TGS单晶TGS crystal
- YSZ单晶YSZ single crystal
- 体单晶bulk crystal
- 超单晶superindividual
- 单晶 多晶栅single poly gate
- 蒽单晶anthracene single crystal
- 钼单晶molybdenum single crystal
- 单晶层single crystalline layer
- 单晶的monomorph
- 单晶锭single crystal ingot
- 单晶膜single crystal film
- 单晶片处理single wafer processing
- 单晶掐single crystal device
- 单晶丝monocrystalline wire
