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- B离子注入引起的金刚石薄膜体积膨胀现象Study of Volume Expansion in B Ion Implantation Diamond Films
- B离子注入B ion implantation
- 本文对B离子注入合成Ib型金刚石薄膜后体积膨胀现象进行了研究,分析了引起体积膨胀的可能因素及原因。In this paper,the volume expansion in B ion implanted Ib type diamond has been studied and the origin has been analyzed.
- GCr15轴承钢N+B离子注入层的XRD、AES和XPS研究Study of the N+B ion implanted layer of GCr15 bearing steel by XRD, AES and XPS
- Freeman离子源~(11)B离子比的提高INCREASING OF ~(11)B ION RATIO OF FREEMAN ION SOURCE
- 用X-射线衍射(XRD)、俄歇电子能谱(AES)和X-光电子能谱(XPS)的方法对N+B离子注入层的相组成、元素的分布和元素的结合状态进行了综合考察。A comprehensive study has been performed on the phase compositions, element distributions and binding states of the N + B ion implanted layer by means of X- ray diffraction(XRD), Auger electron spectroscopy(AES) and X- ray photoelectron spectroscopy(XPS).
- 预测了B离子注入PyC界面相后,经高温处理生成的碳化硼能够和氧、硫酸钠反应生成氧化硼。 氧化硼在其挥发温度(1273K)以下能够有效阻挡氧及部分硫酸钠蒸汽的进一步扩散,从而保护了纤维。Implanted B ion in the PyC interphase came into being B4C, and reacted with oxygen and sodium sulfate producing B2O3. B2O3 could barrier the diffusion of O2 and Na2SO4 steam into interphase downwards of 1273K of volatilization temperature of B2O3. Upwards of 1273K, B2O3 will volatilize gradually and lose the protection to the interphase.
- 首次用热力学计算和分子动力学方法研究了PyC界面相注入B离子对C/SiC复合材料抗氧化性及抗腐蚀性能的影响。Thermodynamics and MD methods were used to study the mechanism ofoxidation and corrosion resistance of PyC interphase by implanting B ion.
- C离子注入C-ion implantation
- N离子注入N+ ion implantation
- 碱性溶液中离子注入钯的玻璃碳电极上硝基苯的电化学还原Electroreduction of nitrobenzene on palladium-implanted glass carbon electrode in basic solution
- Ti离子注入Ti ion implantation
- 氩离子注入argon ion implantation
- 铜离子注入copper ion implantation
- 氢离子注入hydrogen ion implantation
- 氮离子注入nitrogen ion implantation
- 钒离子注入vanadium ion implantation
- 铍离子注入Be ion implantation
- 碳离子注入Carbon ion implantation
- 铌离子注入niobium ion implantation alloying