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- Au Si surface barrier detector 金硅面垒探测器
- And the cautionary measures and the universal maintain methods for Au-Si surface barrier detector have been specified. 同时,还叙述了金硅面垒探测器的维护保养方法和使用注意事项。
- Nal(Tl) scintillation detector and Si(Au) surface barrier semiconductor detector are used to measure X-ray fluctuations in the HT-6B Tokamak device. 用NaI(Tl)晶体闪烁探测器和金硅面垒型半导体探测器,在HT-6B托卡马克装置上对X射线起伏进行了相关测量。
- A GOLD-SILICON SURFACE BARRIER DETECTOR TYPE GM1101 GM1101型高分辨率金硅面垒探测器
- au-signaling surface barrier detector 金-硅面垒探测器
- Aurum-Silicon surface barrier detector 金硅面垒探测器
- gallium arsenide surface barrier detector 砷化镓面垒探测器
- Recovery and maintain of Au-Si surface barrier detector 金硅面垒探测器的修复与保养
- Thick Full Depleted Surface Barrier Detector and I ts Application 厚耗尽层面垒探测器及其应用
- Partially depleted gold silicon surface barrier detectors 金硅面垒型探测器
- The cell surface barrier had been broached. 细胞表面屏障被凿开。
- surface barrier detector 表面势垒型探测器,面垒型探测器
- Au-Si surface barrier detector [化] 金-硅面垒探测器
- In addition, the oxidized Si surface can also suppress the formation of the silicide phase. 实验结果还发现，氧化了的Si衬底可以有效抑制硅化铒的生成。
- A stable phase of Er silicide can appear certainly on the Si surface at the annealing temperature higher than a critical value of 400 oC. 退火温度高于临界值400oC时，在Si表面就会形成Er硅化物的稳定相。
- Our results show that this technique is capable of nitride large Si surface areas at low temperatures with a uniform layers of silicon nitrides. 结果表明，这种方法可以用于硅表面的低温氮化处理，获得大面积的均匀氮化硅表层。
- Influence of Frequency on CV Characteristics of Semiconductor Surface Barrier Detectors 频率对GM型半导体探测器CV特性的影响
- Distribution and precipitation of Ni in Si were studied by atomic absorption spectrometry (AAS), X-Ray fluorescence analysis (XRF) and scaning electron microscope (SEM) . The concentration of Ni is much higher at Si surface than in the interior. 用原子吸收光谱和X射线荧光光谱,测得Ni在Si中的分布为内部浓度低,表面浓度高的U形分布。
- H- passivating Si surface has been achieved by using chemical method, and the nanometer-scale line structure with 5Onm on Si surface has been made by using STM selective oxidation and chemical etch. 利用化学方法实现氢钝化Si表面，研制确定了STM选择局域氧化的制备工艺，制备了5onm的氧化硅线条结构，利用化学腐蚀将此图形转移到硅衬底上。
- In third chapter, a model of step structure was introduced, and the fixed points of its Hamiltonian renormalization equations can be used to classify the different Si surfaces. 第三章首先简单的介绍了重整化群方法，然后讲述一个台阶结构的模型，它的重整化群方程的不动点可以用来区分不同的Si表面的台阶结构。
