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- 砷化镓MMICGaAs MMIC
- 用于手机砷化镓MMIC射频开关的研制The Research on GaAs MMIC RF Switch for Handset
- 砷化镓负电子亲合势光电阴极激活灵敏度在线检测与分析ON-LINE INSPECTION AND ANALYSIS OF THE ACTIVE SENSITIVITYOF GaAs NEGATIVE ELECTRON AFFINITY PHOTOCATHODE
- 磷化砷化镓片的最大光致发光波长及其相应成分的试验方法Test Method for Wavelength of Peak Photoluminescence and the Corresponding Composition of Gallium Arsenide Phosphide Wafers
- 用阶跃恢复法测定砷化镓结型(p-n和M-S结)两极管的载流子寿命MEASUREMENT OF CARRIER LIFETIME OF GaAs DIODES WITH p-n AND M-S JUNCTIONS BY STEP RECOVERY METHOD
- 在砷化镓衬底上异质外延磷化镓的表面缺陷与绿色发光管(摘要)Surface Defects of Heteroepitaxial Layers of GaP on GaAs Substrates and Green Emitting Electroluminescent(EL) Diodes(Abstract)
- 给出了国产WC50型低噪声砷化镓场效应晶体管在C波段的噪声参数及在C、S波段的s参数。Noise parameters at the C-band and s parameters at the C/S band for WC50 low noise GaAs FET are provided.
- 砷化镓熔体GaAs melt
- 砷化镓gallium arsenide
- 低温砷化镓LT-GaAs
- 砷化镓材料gallium arsenide material
- 磷砷化镓gallium arsenide phosphide
- 砷磷化镓gallium arsenide-phosphide
- 砷化镓层gallium arsenide layer
- 砷化镓磷gallium arsenide phosphide
- ZnS型晶体<110>沟道坑不对称性及锡在砷化镓中的晶格位CHANNELING DIP ASYMMETRY OF <110> AXIS IN ZnS-TYPE CRYSTALS AND THE LATTICE LOCATION OFIMPURITY Sn ATOMS IN GaAs CRYSTAL
- 砷化镓外延gallium arsenide epitaxy
- 砷化镓衬底gaas substrate
- 薄膜砷化镓thin film gallium arsenide
- 砷化镓单晶arsenide gallium monocrystal
