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- 延伸漏极N型MOSextended drain NMOSFET
- 第三章对芯片中的特殊元器件进行了仿真分析,并且完成了在CMOS工艺下的延伸漏极NMOS功率管研究;Chapter 3 presents simulation results of the special devices of BCD technology with Medici and the study of extended drain power NMOS fabricated with Conventional CMOS technology;
- p型横向延伸漏金属氧化物半导体管pLEDMOS
- n 型掺杂的漏极n doped drain
- 漏funnel
- 漏极drain(electrode)
- 户型house type
- 笔型pen type
- 整型integer
- 沙漏sandglass
- 运动型motile
- 漏油oil leak
- 表型phenotype
- 漏的oozy
- 外型尺寸external dimension
- 源漏极source-drain electrode
- B型Type B
- 漏出leak
- 板型mplate
- 漏失leakage loss
