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- 摘要推导了双栅MOSFET器件在深度方向上薛定谔方程的解析解以求得电子密度和阈电压。The analytical solutions to 1D Schr?dinger equation (in depth direction) in double-gate (DG) MOSFETs are derived to calculate electron density and threshold voltage.
- 考虑量子效应的双栅MOSFET的阈电压解析建模Analytical Modeling of Threshold Voltage for Double-Gate MOSFET Fully Comprising Quantum Mechanical Effects
- 双栅MOSFETdouble-gate MOSFET
- 双pair
- 槽栅MOSFETTrench-gate MOSFET
- 双击double-click
- 沟槽栅MOSFETtrench MOSFET
- 双语diglossia
- 栅fence
- 双赢Win-win
- 栅格grid
- 双色two-tone color
- 双线crewel
- 双字double word
- 双倍doubling
- 双核dicaryon
- 双语的bilingual
- 双性恋bisexual love
- MOSFET栅MOSFET gate
- 双全complete in both respects