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- wide band gap materials 宽带隙半导体材料
- Tetrahedral amorphous carbon films (ta C) have become a new type of wide band gap amorphous materials because of its valuable physical and chemical properties. 四配位非晶碳薄膜是近年来发展的一种新型宽带隙半导体材料,具有独特的物理和化学特性。
- The The results indicate that titanium oxide films have wide band gap and better blood-compatibility than LTIC. 研究表明， 氧化钛薄膜具有宽禁带的半导体特性，血液相容性优于热解碳。
- Among transitional metal oxides,nano NiO is one of the relatively few metal oxides with p-type semiconductivity,which has stable and wide band gap. 纳米氧化镍是过渡金属氧化物中不多见的p型半导体之一,具有稳定而较宽的带隙,作为一种新型功能材料受到人们关注。
- wide band gap Ⅱ-Ⅵ diluted semiconductors 宽带Ⅱ-Ⅵ族磁性半导体
- The Development of Wide Band Gap Semiconductor device 宽禁带半导体器件的发展
- Keywords Aluminm nitride;Wide band gap semiconductor;Heteroepitaxy; 氮化铝;宽禁带半导体;异质外延;
- Preparation and application of AlN films with wide band gap semiconductor 宽带隙半导体AlN薄膜的制备及应用
- Preparation and application of AIN films with wide band gap semiconductor 宽带隙半导体AIN薄膜的制备及应用
- Photonic crystals are a new kind of materials with photonic band gap. 光子晶体是一种具有光子带隙的新型功能材料。
- A novel BWO with photonic band gap structure[J]. 引用该论文 陈波;钱宝良;钟辉煌.
- RTWP: Received Total Wide band Power. 接收总带宽功率。
- Test Fdb : random vibration wide band. Fdb 试验.;在宽带上的随机振动
- wide band gap 宽禁带
- wide band gap semiconductor 宽禁带半导体
- Design plan of wide band network of feicheng Mining Group Co. 肥城矿业集团公司宽带网络设计方案。
- A novel photonic band gap (PBG) structure is presented in this paper. 提出一种新型微带光子带隙结构。
- Such system is used to digitize high-speed, wide band signal. 该系统适用于对高速、宽带的瞬态信号进行数字化处理。
- Development of fused biconical taper wide band coupler[J]. 引用该论文 吕敏;冯志江;杨笛;张素娟.
- An introduction is given on the latest progress and prospective applications, with a detailed discussion of the omnidirectional band gap, control of Brewster's angle, ultrarefract ion phenomena and light localization one dimensional materials. 文章介绍了一维介电以及金属 -介电光子晶体的最新研究进展和应用前景 ,并系统综述了一维材料中全向能隙、布儒斯特角控制、超折射光学效应以及光子局域化等对光传输的影响
