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- The upshift of valence band edge and the downshift of conduction band edge under tensile strain are responsible for that. 这是因为外加伸展应力使得矽的价电带往上移动以及导电带向下移动造成。
- The upshift of valence band edge under mechanical strain increases the majority hole concentration at the oxide/Si interface. 价电带的向上移动会使得氧化层以及矽的接面的电洞浓度增加。
- valence band edge 价带顶边
- Black with yellow band edge in white. 船身黑色,在黄色色带的两边是白色的细条。
- Electronic structure analysis shows that the doping S could substantially lower the band gap of TiO_2 by the presence of an impurity state of S3p on the upper edge of valence band. 对TiO_(2-x)S_x的电子结构分析表明，其带隙相对于未掺杂TiO_2有所减小，这是由S3p杂质态在价带上边沿的出现造成的。 可以推断，由S3p杂质态到导带的跃迁造成了实验观测到的S掺杂TiO_2吸收边沿的红移。
- The absorption edge increases as the amount of fluorine is raised. The optical energy gap E g is mainly determined by CF bond in the films, which results in the change of the density of states in band tail of the valence band. 薄膜中氟的引入对吸收边和光学带隙产生较大的影响 ,吸收边随氟含量的提高而增大 ,光学带隙则主要取决于CF键的含量 ,是由于强电负性F的引入改变了价带带尾附近带隙中态密度的结果所至
- The reason is that their valence band is full of electrons, which obstructs current flow. 因为它们的价带填满了电子，使电流无法流动。
- Selects or disables the VFO band edge limiting for the current band. 设置当前波段的VFO边界限制功能。
- The highest-energy band containing electrons is called the valence band, and the next higher one is the conduction band. 填有电子而能量最高的能带称为价带，相邻的更高能带称为导带。
- In the band structure, one band that is completely filled with electrons is termed valence band. 在能带结构中,完全填满电子的带被称为价带。
- The interface states and valence band offsets of Si/GaAs heterojunction have been studiedby the self-consistent EHT method. 本文报道用自洽EHT方法研究Si/GaAs异质结界面态分布和价带不连续性。
- The Gray-Brown method has been performed to measure Si/SiO_2 interface state density D(?) near conduct and valence band, also the average interface state density Dit. 本工作建立了能准确测量MOS电容禁带两端界面态密度分布和平均界面态密度的Gray-Brown法(简称G-B法),并同高低频C-V法进行了比较,结合Stretch Out(简称S-O)法研究了不同工艺MOS电容的辐照感生界面态特性。
- The band edge excitonic transitions were measured by the reflectivity and photoluminescence measurements. 利用反射及光激萤光量测能隙边缘的激子跃迁。
- It is suggested that the 1.447eV and 1.32eV PL emis-sions are caused by the double acceptors Ga_(As), with levels 78meV and 203meV above the valence band, respectively. 认为1.;447eV和1
- Semimagnetic semiconductor Zn_(1-x)Mn_xSe (x= 0.01) exhibits a broad band absorption inthe region of band edge. 室温下半磁半导体Zn_(1-x)Mn_xSe(x=0.;01)具有较宽的带边吸收
- This form of repair, which will mainly after wandering for tape or other reasons arising from the band edge damage repair. 这种形式的修补器,主要用于胶带跑偏后或其它原因引起的带边损坏的修补。
- From the PL measurement the near band edge(NBE) emission and deep-level(DL) emission are observed in unannealed AZO thin films. 未退火样品的光致发光(PL)谱由361 nm附近的紫外带边发射峰和500 nm附近的深能级发射峰组成。
- Blue shift appears on the absorb edgea in the absorption spectrum and also on the exciton band edge emission peaks in the luminescence spectrum. 在光致发光谱中;不仅激子直接复合产生的带边发射产生了蓝移;而且陷阱态复合产生的宽带发射也发生了蓝移.
- While the cycling performance of the anode can improve due to the structural stabilization of the material Li 5Mn 7CoO 8 corresponding to the decrease of the valence band width and enhancement of the Co-O bond. 同时由于价带宽度变窄 ;Co-O键间的相互作用比Mn -O键间的相互作用强 ;所以 ;结构稳定性增加 ;电极循环性能改善 .
- Charge carriers in semiconductors come in two flavors: conduction electrons, which are electrons in the conduction band, and valence holes, which are electrons missing from the valence band. 半导体内的电荷载子也有两种：一种是传导带中的传导电子，另一种是价带中因失去电子而产生的价电洞。
