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- tin oxide semiconductor 氧化锡半导体
- VMOS? Vertical Metal Oxide Semiconductor? 垂直金属氧化物半导体?
- The addition of tin oxide has a stabilizing effect on the colour. 添加氧化锡能增加颜色的稳定性。
- Dioctyl phthalate was synthesized using di n octyl tin oxide as an aprotic acid catalyst. 用氧化二辛基锡催化合成邻苯二甲酸二辛酯。
- FPGAs rely on the ubiquitous transistor-based technology called complementary metal oxide semiconductor (CMOS). FPGA使用的材料是互补式金属氧化物半导体（CMOS）技术，这是种随处可见的电晶体技术。
- SnO_2 is a wide-band oxide semiconductor with a bandwidth of 3.6~4.0eV and a tetragonal rutile crystal structure. SnO_2是一种对可见光透明的宽带隙氧化物半导体;禁带宽度3.;7-4
- The sputtering power has a great influence upon the structural and electrochemical properties of tin oxide films. 溅射功率对薄膜的电化学性能有较大的影响。
- Result showed that the obtained Sb-doped tin oxide nanopowders possessed high specific surface area. 结果表明,采用乙醇超临界流体干燥法可得到高比表面积的掺锑氧化锡纳米粉体。
- Therefore, from the material point of view, is a zinc oxide varistors, "II-VI oxide semiconductor nation. 在中国台湾，压敏电阻器是按其用途来命名的，称为"突波吸收器"。压敏电阻器按其用途有时也称为“电冲击（浪涌）抑制器（吸收器）”。
- Stearic acid and tetrabutyl titanate were used to improve the hydrophobicity of antimony doped tin oxide(ATO) nano-powders. 用硬脂酸/钛酸四丁酯复合改性剂对掺锑二氧化锡(ATO)纳米粉体进行表面有机化改性处理。
- Such is the pace of change that CCDs are themselves being overtaken by CMOS (Complementary Metal Oxide Semiconductor) technology. 随著创新的脚步电荷耦合元件被互补金属氧化半导体技术所取代。
- The design principles of indium tin oxide film(ITO) to prevent lectrostatic discharge for optical solar reflector(OSR) are studied. 研究了光学太阳反射镜抗静电放电用氧化铟锡薄膜的设计原则 .
- Indium tin oxide(ITO) films were deposited by DC magnetron sputtering system in different deposition pressures and V(Ar):V(O2) gas mixtures. 用直流磁控溅射系统在不同气压和氩氧流量比(V(Ar):V(O2),体积比)下制备铟锡氧化物(ITO)薄膜。
- This configuration forces the PDC master to announce itself as a reliable time source and uses the built-in complementary metal oxide semiconductor (CMOS) clock. 这种配置会强制PDC主机将它自身宣布为可靠的时间源,从而使用内置的互补金属氧化物半导体(CMOS)时钟。
- Nonlinear optical properties of indium tin oxide (ITO) films have been investigated by using second harmonic generation (SHG) technique. 利用二次谐波产生技术研究了氧化铟锡薄膜的非线性光学特性。
- The preparations, performance and mechanisms of lithium intercalating for tin oxide, tin composite oxide and (tin-based) alloy were introduced. 总结了锡氧化物、锡复合氧化物以及锡合金的制备方法、性能和贮锂机理,概述了锂离子电池锡基负极材料的研究现状。
- Abstract: Stearic acid and tetrabutyl titanate were used to improve the hydrophobicity of antimony doped tin oxide (ATO) nano-powders . 摘 要： 用硬脂酸/钛酸四丁酯复合改性剂对掺锑二氧化锡(ATO)纳米粉体进行表面有机化改性处理。
- The foreground of applying indium tin oxide film to heat-insulating and energy\|saving in glass field has been analysed. 分析了氧化铟锡薄膜应用于玻璃领域隔热节能的前景。
- For this purpose, at least one indium tin oxide layer (10) is present in at least one of the further recording stacks (3). 为此目的，至少有一个铟锡氧化物层(10)位于至少一个另外的记录叠(3)中。
- The agreement includes Complementary Metal Oxide Semiconductor (CMOS) and Silicon-on-Insulator (SOI) technologies as well as advanced semiconductor research and design enablement transitioning at the 45-nanometer generation. 该协议包括互补金属氧化物半导体(CMOS)以及绝缘硅片(SOI)技术以及转向45纳米级别高端半导体的研究和设计。
