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- thorium silicide 硅化钍
- Marie found another called thorium. 玛丽发现了另一种物质，叫钍。
- A radioactive isotope of thorium with mass number228. 射钍钍的放射性同位，质量数为
- This is clearly confirmed by the detection of thorium. 这显然证实了检测钍.
- They recognized that in a thorium province Pb208 would present complications. 他们承认，含钍区内的Pb208会产生干扰。
- Followed by the slow decomposition of uranium to another element thorium. 铀元素随后缓慢分解为另一种元素钍。
- We are actually trying to measure this profile and to detect thorium. 我们正试图测量这个图表，以侦测钍的存在。
- In this thesis, the formation of NiSi silicide using rapid thermal annealing is investigated. 中文摘要在此篇论文里，使用快速热退火去形成镍化矽的制程被研究。
- The application of titanium silicide in integrated circuits was emphatically introduced. 对硅化钛在集成电路中的应用进行了重点介绍。
- Preliminary results have beenobtained for the early stages of silicide formation on metal surfaces. 综合应用二者对金属硅化物形成的研究已取得初步成果。
- When nickel silicide is formed on silicon substrate, there is a Schottky barrier between silicon and nickel silicide. 当我们在矽基板上形成矽化镍时，将会有萧特基接面存在其间。
- In this thesis, we will provide a novel application of nickel silicide on photo detector. 然而在本篇论文中，我们将会提出一个新颖的矽化镍应用在光侦测器上。
- Chemical compounds and mixtures containing uranium and thorium are active in direct proportion to the amount of these metals contained in them. 含铀和钍的化合物和混合物活跃的程度与这些化合物和混合物中这两种金属的含量直接相关。
- In this dissertation we focus on the growth and evolution of erbium silicide nanostructures. 在本论文的工作中，我们主要研究硅化铒纳米结构的生长和演化，主要的工作和创新点如下： 1.;在斜切的硅（001）面上获得了取向一致的硅化铒纳米线，长方形纳米岛和正方形纳米岛。
- The effect of oxygen impurity on silicide formation has been observed.Finally, the mechanism on the formation of... 观察到氧杂质对形成条件的影响,简单讨论了离子束混合形成硅化物的机理。
- We have a production line of organic chloride, silicide, nitride compounds and etc. 目前产品以有机卤化物、有机硅化物、氮化物系列产品为主。
- I measured the activity of a number of minerals; all of then~ that appear to be radioactive always contain uranium or thorium. 我测量了一些矿物的活性，所有显示放射性的物质均含有铀和针。
- The average microhardness of the laser clad silicide alloy coating ranges from HV650 to HV750. 涂层组织显微硬度在HV650-750之间,沿层深分布均匀;
- ErSi2 silicide is found apparently in the films grown at lower temperatures and/or in lower oxygen ambient pressures. 在较低的温度和较低的氧气压下在薄膜内易生成硅化铒。
- The silicide coatings obtained in the fluidized-bed are similar to those prepared by other methods. 流床法获得的硅化物层与其它方法得到的相类似。
