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- Reactions often reduced by the formation a thin oxide film which limits access of oxygen, water vapor, and other gases. 反应常常由于氧化薄膜的形成而减弱;因为氧化膜阻止了氧气;水蒸气和其它气体的进入.
- The effects of scan rate on LSV for the reduction of PbO_2 in the anodic film on Pb conform to the reduotion of a thin oxidized film. 扫速对静止Pb上阳极膜中PbO_2的LSV法还原的影响符合薄膜反应的规律。
- The process of manufacturing thin oxide films by chemical liquid phase deposition and its application in integrated circuits industry is discussed. Some novel research results are also reported. 摘要介绍了化学液相淀积法制备氧化物薄膜的工艺过程及其在集成电路生产中的应用，并报道了一些最新研究成果。
- thin oxidation films 氧化物薄膜
- Solid State Multinuclear NMR Studies of Nanostructured Thin Oxide Films 纳米结构氧化薄膜的固态多核核磁共振研究
- Reduced pressure oxidation offers an attractive way of growing thin oxides in a controlled manner. 低压氧化提供了一种在可控方式下生长薄层氧化物的好方法。
- The results show that there exists a few cracks in sealed anodic oxidation films. 随氧化时间延长,氧化膜受热后裂纹数量增多;
- Peeling of oxidation film and oxidation-decarbonization are more serious on the surface than on the sub-surface. 试样表面的氧化腐蚀及氧化皮剥落均比次表层严重,表面的开裂也加速了次表层裂纹的形核和扩展。
- Most phenomena of ununiformity of the anodic oxidation films are summarized from such two aspects as film formation and production process. 从膜层的形成和生产过程两个方面总结了阳极氧化膜层不均匀的主要现象,对出现黑斑、掉膜、膜层腐蚀和颜色暗淡等现象进行了原因分析。
- Polycrystalline nickel silicide film formed on thin oxide by rapid thermal annealing (RTA) has been investigated by capacitance voltage ( C V ) measurements. 本文研究了在薄二氧化硅层上快速热退火(RTA)形成的多晶硅化镍膜的电特性。
- Want to make shoe foxing yuan smooth, must enclothe on size face, prevent oxidation film to generate. 要想使鞋围条元光,必须覆盖上胶料表面,防止氧化膜生成。
- The compositions of oxidation film which could restrain biooxidation of arsenopyrite were indicated as jarosite and arsenolite by XRD. 用X射线粉晶衍射法对细菌氧化产物进行物相分析，结果表明氧化物的主要成分为黄钾铁矾，其次为砷华。
- The technology for thin oxide growth is still emerging with a variety of techniques being used. 薄层氧化物生长工艺仍在产生一系列可供采用的技术。
- The results show that andizing temperature and time have a pronounced effect on abrasiveness of oxid film, other factors havn't great effect. 指出了阳极氧化温度、氧化时间显著地影响氧化膜的耐磨性；而合金成分、常温封孔、电流密度、硫酸浓度和铝离子浓度对氧化膜的耐磨性影响不大。
- In the first stage of anodic deposition, the flocculent oxidation film deposits and extends on the surface of MB8 magnesium alloy. 微弧阶段是前期缺陷减少与消失并形成均匀膜层的过程，陶瓷层表面微孔孔径较小，膜层均匀致密；
- With very thin oxide layers, mere handling of microelectronic chips can produce pinholes in the gates. 当氧化层极薄，光是触摸微电子晶片就可能在闸极上产生针孔。
- Abstract The heated oxidation film of U-Nb alloy is studied by auger electron spectroscopy (AES) at different temperature in the high vacuum chamber. 摘要 用俄歇电子能谱(AES)研究了高真空下,环境温度对铀铌合金真空氧化膜的影响。
- If the oxide film is hard, sliding occurs on the outside thereof. 如果氧化膜较硬，则滑动在它们的外面发生。
- N. Ozer, Optical and electrochemical characteristics of sol-gel deposited tungsten oxide films: a comparison, Thin Solid Films, 304 pp. 310-314 (1997) . 黄献庆;均匀与组成调制氮化钽薄膜在铜金属化的扩散阻碍性质评估;逢甲大学材料科学与工程研究所硕士论文（2000）.
