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- A close relationship between OES intensity and thin film structure was found.Therefore, the optimal deposition conditions can be established by OES. 因此在沉积微晶矽或串连式太阳能电池时，可藉由放射光谱仪直接量测的结果，即时调整实验参数来得到最适化的沉积条件。
- Without complex techniques the multilayer thin film structure was deposited easily with increasing the thickness of the single layer and decreasing the periodicity. 通过增加周期中单层膜的级次来减少整个高反射膜系的周期数。
- Thin Film Structure and Morphology Evolute 建筑膜结构织物材料市场极具潜力
- The Study of the Bi-Layered Ferroelectric Thin Films Structure of High Breakdown Voltage and Low Leakage Current , and the Fabrication of Memory Devices. 高介电薄膜材料及应用---靶材之提供与测试系统之建立---高耐压低漏电流双层铁电薄膜及记忆体元件之制造
- Study on Bi_4Ti_3O_(12) Ferroelectric Thin Film Structure with XPS Spectra Bi_4Ti_3O_(12)铁电薄膜X射线光电子能谱研究
- AFM and VAXPS Study of the Influence of Electric Field on Au-Ag Thin Film Structure 电场对Au-Ag薄膜结构影响的AFM和VAXPS研究
- Abbreviation of Thin Film Transistor. 薄膜晶体三极管的缩写。
- A thin film formed on the surface of the pulp. 纸浆表面结了一层膜。
- thin film structure 薄膜结构
- Yang interference of double slits, thin film interference. 杨氏双缝干涉。薄膜干涉。
- The SnO2/CeO2 thin film was prepared by powder sputter method. 利用粉末溅射,研究了 SnO2/CeO2微型平面薄膜。
- This is the output terminal of a thin film transistor (TFT). 这是末端一只薄膜晶体三极管的生产(TFT).
- Design of Interleaver with Cascaded Thin Film Filter[J]. 引用该论文 陈海星;顾培夫;李海峰;章岳光;沈伟东.
- Structure and Electroluminescence Characteristics of Organic Thin Film Electroluminescent Devices[J]. 引用该论文 李方红;刘旭;顾培夫;唐晋发.
- Suzhou NSG AFC THIN FILMS ELECTRONICS CO., LTD. 苏州美日薄膜电子有限公司。
- The CMR effect of the thin films was investigated . 研究了La_(1-x)Te_xMnO_3薄膜的CMR效应。
- Nanocomposite thin films PT／PEK-C were prepared. 制备了纳米复合材料薄膜PT／PEK-C。
- Film structure, phrase composition, element composition were studied using XRD,SEM,EDS,and XPS in detail. 使用了X射线衍射仪、扫描电镜、光电子能谱仪 金相显微镜对膜层的结构、相组成、元素组成进行了系列的分析。
- A thin film electroluminescent (EL) cell having Au/ZnSe:Mn/n-Ge structure has been fabricated by molecular beam epitaxy (MBE). 用分子束外延法制成了具有Au/ZnSe:Mn/n-Ge结构的电致发光单晶膜,最低起亮电压为6V。
- Provides the theoretical reference for the anti-condensation design for buildings with double ETFE film structure. 为双层薄膜围护结构系统的防结露设计提供了理论参考。
