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- In this thesis, the formation of NiSi silicide using rapid thermal annealing is investigated. 中文摘要在此篇论文里，使用快速热退火去形成镍化矽的制程被研究。
- Af-ter thermal annealing about 60% of radiation damage induced by implantation can be restored. 在热退火后,约60%25的注入引起的辐射损伤可以得到恢复。
- Effects of thermal annealing on the dielectric properties of PZN-PT-BT system ceramics were studied. 考察了退火热处理对PZN-PT-BT陶瓷介电性能和介电弛豫的影响。
- The behaviour of infrared rapid thermal annealing (IRTA) of GaAs MESFET active layer and n+ layer formed by Si+ implantation is studied. 本文研究了GaAs MESFET有源层和n~+层Si~+注入的红外快速退火行为。
- Moreover, after rapid thermal annealing (RTA), the TE dominant peaks can be changed to transverse-magnetic (TM)-field-enhanced and vice versa. 并且，在快速热退火(RTA)之后，原本横向电波主宰的波峰能转变成横向磁波主宰，反之亦然。
- We utilized rapid thermal annealing (RTA) and laser induced annealing (LIA) processes to form nickel silicide and discussed the role of amorphous silicon in annealing process. 我们分别利用快速热退火与雷射引致退火形成矽化镍并讨论非晶矽在退火制程中所扮演的角色。
- The experimental results indi cate that the Nf and Nit of laser- recrystallized specimens are much lower than those of non recrystallized samples with thermal annealing. 结果表明,和未再结晶的热退火样品相比,激光再结晶后,背界面的界面态密度大幅度下降。
- Polycrystalline nickel silicide film formed on thin oxide by rapid thermal annealing (RTA) has been investigated by capacitance voltage ( C V ) measurements. 本文研究了在薄二氧化硅层上快速热退火(RTA)形成的多晶硅化镍膜的电特性。
- The ZrCl4, HfCl4, and SiCl4 were used as the sol-gel precursors to form the hafnium and zirconium silicate after rapid thermal annealing at high temperature. 我们以四氯化锆、四氯化铪及四氯化矽为溶胶-凝胶溶液之前驱物，旋转涂布于晶圆上形成薄膜，经高温退火后形成含有锆及铪之金属矽氧化物。
- In this paper, the influences of conventional furnace annealing (CFA) and rapid thermal annealing (RTA) and annealing time on STO films were systematically studied. 系统研究了CFA与RTA两种热处理方式以及热处理温度和时间对STO薄膜微结构的影响。
- Another noteworthy feature is that the inhomogeneous oxidation of as-deposited HfN film is examined and transferred into the homogeneous HfOxNy film after thermal annealing. 另一个值得注意的现象是对于刚沉积的氮化铪薄膜中，即已经出现了不均匀的氧化，但经过后续的高温制程处理将转变成为均匀的氮氧化铪薄膜。
- Pb(Zr0.52Ti0.48)O3 (PZT) and (Ba0.7Sr0.3)TiO3 (BST) ferroelectric thin films with distinct perovskite microstructure were prepared by RF magnetron sputtering method ,following a rapid thermal annealing (RTA) process. 应用射频磁控溅射方法;利用快速热退火(RTA)工艺;分别制备出了具有良好铁电性能的 Pb(Zr0.;52Ti0
- Phase change recording medium GeSb2Te4t hin film is prepared by RF-magnetron sputtering, Thermal annealing effects on the optical and structural properties of GeSb2Te4 thin films have been studied systematically. 采用高频磁控溅射制备了GeSb_2Te_4薄膜.;系统地研究了真空热退火对GeSb_2Te_4薄膜光学性质和晶体结构的影响
- Samples of thermal annealing with the slow cooling rate have quite clear indium-rich clusters.The interfaces between the wells and barriers are quite clear and the well shapes are quite good. 当试片热退火处理是以慢速的方式降温时，可以看到相当清楚的铟聚集，并且其界面及量子井形状都相当规则。
- The effect of rapid thermal annealing (RTA) ambient on denuded zone and oxygen precipitates in Czochralski(CZ) silicon wafers is studied in this paper.N2 and a N2/NH3 mixture are used as RTA ambient. 研究了N2和N2/NH3混合气两种不同气氛快速退火处理硅片对洁净区和氧沉淀分布的影响.;研究发现:N2/NH3混合气氛处理的硅片在后序热处理中表层形成很薄的洁净区同时体内形成高密度的氧沉淀;
- Rapid Thermal Annealing of As~+ Implanted SOI As~+注入SOI的快速热退火研究
- Rapid Thermal Annealing of BF_2~+ Implanted Si BF_2~+注入Si的快速退火
- recurrent rapid thermal annealing 快速循环退火
- Synthetic silicides with good properties were prepared,as Y ions were implanted into silicon using metal vapor vacuum arc (MEVVA) ion implantor and annealed by Rapid Thermal Annealing (RTA). 用金属蒸发真空弧离子源注入机将Y离子注入硅，制备出特性良好的硅化物。
- A term sometimes applied to a stylus in a thermal matrix printer. 有时用来指热敏点阵打印机的触针的一个术语。
