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- AFM Analysis of InAs Quantum Dots on GaAs Tensile Strained Layer on InP Substrate InP衬底GaAs张应变层上InAs量子点的原子力显微镜分析
- tensile strained layer 张应变
- This shape allows only tensile strain. 这种形状使膜片只允承受拉伸压力。
- The usual method to induce process strain is to glow a highly strained nitride cap layer beneath the NMOS.This way, there is tensile strain induced in the channel. 现今常用的制程应变为，于N型金氧半场效体上方覆诱层强硬力氮化物，藉此对通道产生张应变。
- The results showed that emulsifiers can decrease the plastic tensile strain. 单甘酯和硬脂酰乳酸钠都增加了塑料的吸水率；
- For fabricating semiconductor optical amplifier of polarization insensitive, a structure of the active layer was designed that is strain compensation with alternate 4 compressive and 3 tensile strain quantum wells and lattice-matched barrier layer. 为了制备偏振不灵敏的半导体光放大器 (SOA) ,将有源区设计为由 4个压应变、3个张应变阱层及晶格匹配的垒层InGaAsP交替组合而成的应变补偿结构。
- The strain layer is composed of a high dielectric constant material. 应变层是由一个高介电常数的材质所构成。
- Heteroepitaxy of InP on GaAs Substrates Using Metamorphic Buffers and Strained Layer Superlattice[J]. 引用该论文 Wang Qi;Ren Xiaomin;Huang Yongqing;Huang Hui;Cai Shiwei.
- The reduction of Si band gap and the enhancement of light intensity under external tensile strain are observed. 在施加外加的伸展应力之下，我们观察到矽的能隙缩减还有光强度的增加。
- We built up a mechanical setup to apply external uniaxial and biaxial tensile strain. 我们建构了一种机制来施加外在单轴或双轴的伸展应力。
- The addition of LMW-GS could increase tensile strain and tensile strength;insoluble glutenin could in... 低相对分子质量麦谷蛋白亚基能增强熟面条的硬度、粘合性、咀嚼性、回复性、拉断力和拉伸应变.
- The upshift of valence band edge and the downshift of conduction band edge under tensile strain are responsible for that. 这是因为外加伸展应力使得矽的价电带往上移动以及导电带向下移动造成。
- Research results show that the relationship between autogenous shrinkage at early ages and ultimate tensile strain can be approximately figured by a quadric equation. 研究结果表明，混凝土早期自收缩大小与相应的极限拉伸应变具有显著的二次曲线关系；
- In this paper, measures to decrease the tensile strain of weld by heating the base metal near the Brittle Temperature Range (BTR) with an auxiliary heat source are described. 本研究通过辅助热源加热脆性温度区间附近的母材金属使之膨胀以减小焊缝所受的拉伸应变。
- It was found that, under tensile strain, the armchair SWNT still was metallic, but the Fermi velocities of them increased with increasing tensile strain. 结果表明，在拉伸形变下扶手椅型SWNT仍然是导体，但其费米速度随拉伸比的变大而变大；
- The 7.4% speed enhancement is achieved for the 250 nm node ring oscillator under uniaxial tensile strain for mutually perpendicular layout of the NFET and the PFET. 对于250奈米制程，经实验量测，以平行于n型金氧半场效电晶体之单轴张力，对n型与p型金氧半场效电晶体通道互相垂直之环型振荡器可有7.;4%25的速度增加。
- Considering the randomness of strength and deformation of concrete material, a mathematic approach of producing random variables series of concrete ultimate tensile strain is proposed. 摘要针对混凝土构件材料强度和变形性质的随机性，采用数学方法提出构造混凝土极限拉应变数列的原理。
- strained layer superlattice(SLS) 应变层超晶格（SLS）
- Lesson S. J D Summers,L Caston.Response of Brown-Egg strain layers to dietaty calcium or phosphorus[J].Poult Sci,1993,72:1510. 谢景文;郝正里.;饲粮钙磷水平与蛋壳质量关系的研究[J]
