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- splitting gate oxidation 分裂栅氧化
- This voltage creates a field across the gate oxide, which causes the adjacent P substrate to invert to N-type. 这一电压在栅极氧化物层上产生一个电场，它导致毗邻的P型衬底转变成N型。
- At the sub 90nm technology node, the gate oxide thickness is expected to be 12-15 Angstrom. 当半导体结点技术发展到小于90纳米时,栅氧化层厚度将减薄至12到15埃。
- With Keithley S900 and TEL-P8 test system, it is applied in the evaluation of gate oxide lifetime of 0.13um process. 本文就已有的测试项目TDDB，根据国外前沿的研究结果，提出了一些新的测试方案，并在C语言的环境下实现算法，结合Keithley S900和TEL-P8测试系统，用于测试0.;13um工艺的栅氧化层寿命。
- In this thesis, we are going to discuss the characteristics of DPN nitrided gate oxide. 因此本论文将讨论去耦电浆氮化闸极氧化层之元件特性。
- The old farm has been split up into house lots. 这古老的农场已被划分为一块块的宅地。
- To obtain high performance and low power device, gate oxide thickness shrinkage is a main stream in modern ULSI industry. 摘要:为了达到高性能和低电压之元件，减少闸极氧化层厚度是现代超大型积体电路工业的一个主流。
- Abstract： The surfaces of poly-Si thin film and gate oxide of thin film transistors were passivated using N2O/NH3 plasma. 摘 要： 采用N2O和NH3等离子钝化技术对多晶硅薄膜表面和栅氧表面进行了钝化处理。
- Furthermore, N ion-implantation that is used in ultra-thin gate oxide parts and in restraining the diffusion of doped impurity is also described. 介绍了氮离子注入在制备超薄氧化栅极及其抑制掺杂杂质原子特别是硼原子扩散等方面的研究和应用。
- The problem is that the gate oxide, which in modern chips is just several atoms thick, is becoming too slim to lay down reliably. 问题是，现代晶片中的闸极氧化层厚度只有几个原子，已经薄到不容易确实放置在晶圆上的地步。
- The most important defect in large size ingots is void, which can degrade the gate oxide integrity (GOI), so as to affect the yields and stability of devices and 1C. 大直径硅单晶、硅片中的最重要的缺陷之一是VOID，它会严重影响硅器件、集成电路的生产成品率和性能稳定性。
- Chapter 1 is an introduction of DPN nitrided gate oxide experiment. The process flow design, device structure and measurement tool are also introduced to realize this experiment. 第一章将针对使用去耦电浆氮化闸极氧化层之背景以及实验规划做个简介，包含元件的制程内容、元件结构及量测仪器，以注明本实验之过程。
- I was out in the back yard splitting logs. 我那时正在后院劈柴。
- The discussion and analysis of RF reliabilities in this thesis included the hot-carrier damage and the critical gate oxide breakdown of MOS transistors. 而本论文中，对于金氧半场效电晶体的可靠度的讨论则是包含了热载子伤害以及闸极氧化层的崩溃。
- A man appeared at the castle gate in the guise of a woodcutter. 一个男子打扮成樵夫的模样出现在城堡的门口。
- She was splitting logs with an axe. 她正用斧子劈木头。
- A skilled person can split slate into layers. 手巧的人能把板岩剖成片。
- Did you remember to padlock the gate? 你是否记得用挂锁把大门锁上？
- I almost split my sides at his stories. 听了他讲的故事，我几乎笑破肚皮。
- It all happened in a split second. 这一切都是在顷刻间发生的。
