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- This thesis reports an analysis of DC and AC behavior of dual-material (DM) double-gate (DG) fully-depleted (FD) silicon on insulator (SOI) MOS device. 摘要:本论文中提出双材料双闸完全解离绝缘体上矽金氧半元件在直流与交流的分析。
- This thesis reports an analysis of intrinsic and fringing capacitance behavior in 100nm SOI (silicon on insulator) CMOS devices. 摘要:本论文中提出了100奈米绝缘体上矽金氧半元件的本体和边缘电容分析。
- This thesis reports a 2D analytical simulation for the capacitance characteristics of partially-depleted (PD) silicon on insulator (SOI) NMOS devices. 摘要:本论文中提出了考虑电流突增情形发生下的部份解离绝缘体上矽N型金氧半元件的电容模拟分析。
- This paper presented an on-chip integration of SOI (Silicon on insulator) CMOS analog IC and piezoresistive cantilever based on the techniques of MEMS and SOI CMOS. 基于MEMS技术和SOI CMOS技术提出了一个包含放大电路与悬臂梁式压阻传感器的集成化方案。
- Silicon on insulator(SOI) structure, as a very large scale integrated circuit(VLSI) wafer, has attractive features such as radiation-hardening, no parasitic capacitance and latch-up effect. 绝缘体上生长的薄单晶硅膜(SOI)具有良好的横向绝缘、抗辐照、无锁存效应和无寄生电容，并能有效地提高硅集成电路的速度和集成度，在深亚微米VLSI技术中，具有很大的优势和潜力。
- laser recrystallized silicon on insulator 激光再结晶的绝缘体上硅结构
- laser processed silicon on insulator 激光处理的绝缘体上硅结构
- strained silicon on insulator (sSOI) 绝缘体上应变硅（sSOI）
- silicon on insulating [ insulator ] substrate 绝缘衬底上外延硅
- silicon on insulating [insulator] substrate 绝缘衬底上外延硅
- Research of High Temperature Pressure Transducer Based on the Silicon on Insulator Technology 基于硅隔离技术的耐高温压力传感器研究
- Study on High-Temperature Piezoresistive Pressure Sensors Based on Silicon on Insulator 绝缘体上硅高温压力传感器研究
- Effect of silicon on effective nutritive element in soil was examined. 本文研究了硅元素对土壤中有效营养元素的影响。
- silicon on insulator material 绝缘体上硅结构材料
- SOI (silicon on insulator) 绝缘体上硅
- Do not use Permatex or RTV silicone on the metal flange surface. 不要在金属法兰表面使用Permatex或RTV硅树脂。
- silicon on insulator device 绝缘器件上外延硅
- silicon on insulator 绝缘体上硅结构
- silicon on insulator substrate 绝缘衬底上外延硅
- Insulated shield: Wraping semiconducting strip on insulated surface. 绝缘屏蔽:在绝缘表面绕包半导电带。
