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Two finite element thermal models for MCM with silicon substrate were built. 针对一个基于硅基板的MCM电路建立了两种不同芯片布局的有限元热分析模型。
When nickel silicide is formed on silicon substrate, there is a Schottky barrier between silicon and nickel silicide. 当我们在矽基板上形成矽化镍时，将会有萧特基接面存在其间。
On the other hand, fluorine implanted into silicon substrate will enhance channel transconductance. 若将氟离子布离进入矽基板上，能够增加通道的转移电导。
In addition, EM simulation of the spiral inductors on the silicon substrate is discussed. 另外，本论文也讨论到在矽基板上螺旋电感的电磁模拟。
Diamond nucleation on ferrous substrate was realized with the inducement of diamond nucleation on silicon substrate in the hot-filament CVD system. 在硅和铁基底上同时进行CVD金刚石的沉积，利用硅基底上的金刚石成核感应金刚石在铁基底上直接成核。
A mathematical model is presented.Using this method, diamond IR antireflective thin film were successfully deposited on a silicon substrate. 通过原位反射率的测量，精确监控了金刚石薄膜的生长厚度, 成功地制备了红外增透膜。
Oriented (100) diamond film is deposited on silicon substrate by adjusting process parameters without use of other assisted measures in hot-filament CVD system. 采用热丝化学汽相淀积 (CVD) ,未用别的辅助措施 ,合成了 (10 0 )晶面的金刚石膜。
IrMn top spin valves,with a structure of Ta/NiFe/CoFe/Cu/CoFe/IrMn/Ta,were deposited on glass and silicon substrate by high vacuum DC magnetron sputtering. 在玻璃和硅衬底上利用高真空直流磁控溅射的方法淀积了结构为Ta/NiFe/CoFe/Cu/CoFe/IrMn/Ta的IrMn顶钉扎自旋阀薄膜。分别研究了增加磁电阻率,降低矫顽力和提高交换场的方法。
In this work, both NMOS and PMOS present the same result, this is, as the silicon substrate is bent, the sharper of the curve, the worse of the reliability. 利用此方法，我们成功提高NMOS的汲极电流与载子迁移率，提升幅度分别为12%25与6%25。在PMOS方面，则无任何改变量。
In order to strain the channel, silicon substrate is bent by applying external mechanical stress, the lattice of channel will be strained after applying uniaxial tensile stress. 为了让通道产生应变，我们选择利用外界机械应力来弯曲矽基板，此时通道将受到单轴张应力而产生应变。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature. 发现在氮化镓材料上具有室温铁磁性的性质，被预期能运用在磁性记忆体的元件和积体电路的材料上。
In order to get strain from the channel, silicon substrate is bent by applying external mechanical stress, the lattice of channel will have strain due to uniaxial tensile stress. 为了让通道产生应变，我们选择利用外界机械应力来弯曲矽基板，此时通道将受到单轴张应力而产生应变。
The active energy of the reaction between the adsorption of SiCl4 on silicon and H2 is lower than that of SiCU direct react with H2 in gas phase, so it can be concluded that the silicon substrate has the catalysis in the reaction process. SiCl_4吸附后的产物与H_2的反应均要低于其在气相反应中所需的活化能,因此反应主要在衬底上发生,且衬底在反应中起到了一定的催化作用。
The rectifying properties of La_(0.8)Sr_(0.2)MnO_3(LSMO)/Si with SrMnO_3(SMO) as barrier layer were compared with the one without SMO,prepared by using RF magnetron sputtering on Silicon substrate. 对用磁控溅射方法在硅基上直接沉积La0.;8Sr0
Scientists have also developed a promising hybrid approach to producing a silicon-based laser that relies on adding a piece of gallium arsenide or indium phosphide to the top of a silicon substrate. 科学家还开发出一种复合方法，在矽基质加上一层砷化镓或磷化铟，制作出矽雷射装置。
Highly ordered nanodot arrays of TiO2 were prepared from Al/TiN films on the silicon substrate by electrochemical anodization of a TiN layer using a nanoporous AAO film as the template. 高度规则排列的氧化钛奈米点阵列可直接由铝与氮化钛双层薄膜之阳极氧化处理获得。
Except for high resolving power, the design introduces more consideration to the present of silicon substrate, whose high refractive index influences the imaging process results strongly. 就设计考量上了除了要求解析度能提升外，在进行晶片反面扫瞄时，更需克服高折射系数矽基板的存在对成像品质的影响。
Preparation and field electron emission of diamond films grown on porous silicon substrates by MW-CVD are studied. 研究了多孔硅衬底微波CVD金刚石薄膜的制备工艺及其场电子发射特性。
Preparation of Atomically-flat Silicon Substrate 原子级平整硅基底的制备
The high quality DLC films were successfully deposited on the surface of silicon substrates at room temperature by the filtered cathodic arc plasma(FCAP) equipment. 利用自行研制的磁过滤等离子体技术(FCAP),并创造性地对衬底施加低频率周期性负偏压,在室温下的单晶硅表面上制备了高质量的非晶金刚石薄膜。

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