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- resonant tunneling current 谐振隧道电流
- The filtering effect could be amplified by placing the ferromagnet in a resonant tunnel diode. 若将铁磁体放入共振穿隧二极体中，可以放大过滤效果。
- The accelerometer is based on Meso-piezoresistanceeffect of GaAs/AlAs RTD (Resonant Tunneling Diodes). 该加速度计是基于 GaAs/AlAs 共振隧穿二极管(RTD)的介观压阻特性,即在力学信号作用下,RTD 结构应力分布发生变化;
- The resonant tunneling of three-tile quasiperiodic superlattices has been in-vestigated in this paper. 本文研究了三元准周期超晶格的电子共振隧穿性质。
- The tunneling current is obstructed when the two ferromagnetic layers have opposite orientations and is allowed when their orientations are the same. 若两侧的铁磁层磁性方向相反，穿隧电流就被挡住，反之则可通过。
- The research and fabrication of an InP-based AlAs/In0.53Ga0.47As double barrier single well resonant tunneling diode(RTD)device are reported. 报道了InP衬底AlAs/In0.;53Ga0
- A novel edge-triggered D-flip-flop based on a resonant tunneling diode (RTD) is proposed and used to construct a binary frequency divider. 摘要提出了一种基于共振隧穿二极管的新型边沿触发D触发器并将之用于构成二进制分频器。
- According to the feature of the output signal from micromechanical tunneling gyroscope, the circuits used to detect and calibrate the weak tunneling current are designed. 针对微机械隧道陀螺仪输出信号的特点,设计出陀螺仪隧道电流的检测及校准电路。
- Conventional resonant tunnel diodes allow currents to flow at a specific voltage, one at which the electrons have an energy that is resonant with the tunneling barrier. 传统共振穿隧二极体在特定电位下可让电流通过，此时电子的能量共振于（即等于）穿隧位障。
- Consequently, it is hard for designers to predict and clarify the tunneling current of SETs (MTs), making the realization of nano-device circuit extremely difficult. 因此對一個元件設計者而言非常不容易預測及釐清單電子電晶體及分子電晶體的穿隧電流，從而使得奈米元件電路難以成真。
- The structure of parallel combination of resonant tunneling diode(RTD)and high electron mobility transistor(HEMT)is a basic element of recent high speed RTD digital circuit. 由共振隧穿二极管(RTD)与高电子迁移率晶体管(HEMT)相并联组成的结构是构成当前RTD高速数字电路常用的基本单元。
- The resonant tunneling diode (RTD) is one of the most promising band-gap engineered heterostructure devices due to its negative differential resistance. 共振隧穿二极管因其特有的负微分电阻特性,成为一种很有前途的基于能带工程的异质结构量子器件。
- In this thesis, one of the quantum devices, the resonant tunneling diodes(RTDs), with Si/SiGe heterostructure operating at low and room temperature are reported. 在本文中，我们将报告一种利用矽/矽锗异质结构制作而成的量子元件-共振穿隧二极体。
- Because of the high integration characteristic of resonant tunneling diode (RTD) circuits, design for testability is significantly important to simplify the RTD circuits testing. 针对共振隧穿二极管(RTD)电路由于具有超高集成度特点所带来的电路测试困难,在故障分析与故障模型的基础上提出了RTD电路的可测试性设计方案。
- The influence of the thickness of SiO2 and La2O3 on the tunneling current is given to compare much different thickness of SiO2 and La2O3 tunneling current on the same equivalent oxide thickness (EOT) condition. 在等效氧化层厚度相同的情况下，比较了几种不同的SiO_2层厚度和La_2O_3层厚度结构的隧穿电流的大小，给出了SiO_2层厚度和La_2O_3层厚度对隧穿电流的影响。
- A higher sensitivity can be achieved by making use of resonant tunneling structures as a piezoresistance device,but it will be very different from each other when different bias position is chosen. 以共振隧穿结构为压阻器件可以得到较高的灵敏度,但是当实验选择不同的工作偏压时,这种压阻效应表现得极其不同。
- In chapter 4, we study the quantum resonant tunneling in supermolecular magnetic cluster [Mn4]2 system by means of the numerically exact solution of the time-dependent Schrodinger equation. 第四章，我们用数值求解含时薛定谔方程的方法，研究超分子磁团簇[Mn4]2体系的量子共振隧穿过程；
- resonant tunneling diodes (RTDs) 共振隧穿二极管
- Resonant tunneling piezoresistive film 共振隧穿压阻薄膜
- Demand is outstripping current production. 现在需求逐渐超过了生产能力。
