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- The filtering effect could be amplified by placing the ferromagnet in a resonant tunnel diode. 若将铁磁体放入共振穿隧二极体中，可以放大过滤效果。
- The accelerometer is based on Meso-piezoresistanceeffect of GaAs/AlAs RTD (Resonant Tunneling Diodes). 该加速度计是基于 GaAs/AlAs 共振隧穿二极管(RTD)的介观压阻特性,即在力学信号作用下,RTD 结构应力分布发生变化;
- The resonant tunneling of three-tile quasiperiodic superlattices has been in-vestigated in this paper. 本文研究了三元准周期超晶格的电子共振隧穿性质。
- The research and fabrication of an InP-based AlAs/In0.53Ga0.47As double barrier single well resonant tunneling diode(RTD)device are reported. 报道了InP衬底AlAs/In0.;53Ga0
- A novel edge-triggered D-flip-flop based on a resonant tunneling diode (RTD) is proposed and used to construct a binary frequency divider. 摘要提出了一种基于共振隧穿二极管的新型边沿触发D触发器并将之用于构成二进制分频器。
- Conventional resonant tunnel diodes allow currents to flow at a specific voltage, one at which the electrons have an energy that is resonant with the tunneling barrier. 传统共振穿隧二极体在特定电位下可让电流通过，此时电子的能量共振于（即等于）穿隧位障。
- The structure of parallel combination of resonant tunneling diode(RTD)and high electron mobility transistor(HEMT)is a basic element of recent high speed RTD digital circuit. 由共振隧穿二极管(RTD)与高电子迁移率晶体管(HEMT)相并联组成的结构是构成当前RTD高速数字电路常用的基本单元。
- The resonant tunneling diode (RTD) is one of the most promising band-gap engineered heterostructure devices due to its negative differential resistance. 共振隧穿二极管因其特有的负微分电阻特性,成为一种很有前途的基于能带工程的异质结构量子器件。
- In this thesis, one of the quantum devices, the resonant tunneling diodes(RTDs), with Si/SiGe heterostructure operating at low and room temperature are reported. 在本文中，我们将报告一种利用矽/矽锗异质结构制作而成的量子元件-共振穿隧二极体。
- Because of the high integration characteristic of resonant tunneling diode (RTD) circuits, design for testability is significantly important to simplify the RTD circuits testing. 针对共振隧穿二极管(RTD)电路由于具有超高集成度特点所带来的电路测试困难,在故障分析与故障模型的基础上提出了RTD电路的可测试性设计方案。
- A higher sensitivity can be achieved by making use of resonant tunneling structures as a piezoresistance device,but it will be very different from each other when different bias position is chosen. 以共振隧穿结构为压阻器件可以得到较高的灵敏度,但是当实验选择不同的工作偏压时,这种压阻效应表现得极其不同。
- In chapter 4, we study the quantum resonant tunneling in supermolecular magnetic cluster [Mn4]2 system by means of the numerically exact solution of the time-dependent Schrodinger equation. 第四章，我们用数值求解含时薛定谔方程的方法，研究超分子磁团簇[Mn4]2体系的量子共振隧穿过程；
- resonant tunneling diodes (RTDs) 共振隧穿二极管
- Resonant tunneling piezoresistive film 共振隧穿压阻薄膜
- selective resonant tunneling model 选择共振隧穿模型
- Selectivity of resonant tunneling 共振隧穿的选择性
- Si/Si1-xGex resonant tunneling diode Si／Si1-xGex共振隧穿二极管
- The classification of nanometer device and solid nanoelectron devices including quantum dot and resonance tunnel device and single electr... 最后对半导体器件的发展提出了展望。
- planar resonant tunneling diodes 平面型共振隧穿二极管
- They are building a submarine cable tunnel. 他们正在建设一条海底电缆隧道。
