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- quantum well mixing 量子阱混杂
- Dual band quantum well infrared photodetector large format array chips[J]. 引用该论文 种明;马文全;苏艳梅;张艳冰;胡小燕;陈良惠.
- Investigation of Quantum Well Lasers which Have Superlattice Buffer Layers[J]. 引用该论文 张福厚;宋珂;邢建平;郝修田;曾一平.
- Add in rice and seasonings, stir fry until all the ingredients well mix. 加入米饭及调味料拌炒均匀即可盛盘。
- Theory models for quantum well states in photoemission spectroscopy[J]. 引用该论文 王得勇;刘杰;贾金锋;刘洪;薛其坤.
- E. H. Li, Quantum well intermixing, Gordon and Breach Science Publishers, 2000. 施敏;半导体物理元件与制作技术(第二版);国立交通大学出版社;民国91年.
- Detectors (contd.): Vertical vs. in-plane geometries. Quantum well intersubband photodetectors. 23光侦测器(续)：垂直与平面结构。量子井次能带间跃迁型光侦测器。
- Mix powder pigment or powder with adhesive to granulate and well mixed. 粉末色素混合及粉末与黏剂混合造粒进行均匀混合。
- GaSb epilayers and GaAsSb/GaAs quantum wells were investigated. 所研究的材料有锑化镓以及锑砷化镓/砷化镓量子井。
- New progress of exciton condensation in coupled quantum wells[J]. 引用该论文 闫占彪;郭震宁.
- Intersubband optical absorption in hyperbolic quantum wells[J]. 引用该论文 谭鹏;路洪.
- Detectors (contd.) : Vertical vs. in-plane geometries. Quantum well intersubband photodetectors. 垂直与平面结构。量子井次能带间跃迁型光侦测器。
- Finally, we got the 940nm InGaAs/AlGaAs strained quantum well semiconductor laser. 最终获得InGaAs/AlGaAs结构的940nm应变量子阱半导体激光器。
- Laser Diodes (contd.): In-plane lasers: double heterostructure, quantum well, multi-contact, surface emitting. 21雷射二极体(续)：平面雷射：双异质结构，量子井，多重电极，面发射。
- Laser Diodes (contd.) : In-plane lasers: double heterostructure, quantum well, multi-contact, surface emitting. 平面镭射：双异质结构，量子井，多重电极，面发射。
- According to practical teat data, the best mix ratio and the influence significance of all mix materials are analyzed. 并根据正交试验的结果，分析了各掺合料之间的最佳组合，以及每种掺合料影响的显著性。
- InGaAs/GaAs/AlGaAs Strained Quantum Well Lasers with Window Regions Fabricated by Impurity free Vacancy Disordering[J]. 引用该论文 徐遵图;徐俊英;杨国文;张敬明;李秉臣;陈良惠;沈光地.
- Therefore , the fuel in flame torch is verv well mixed with the air to mak... 该烧嘴可燃烧重油、渣油等，或用蒸汽雾化。
- The results also show that quicker response and smoother start-up were gained with GOX, while easier ignition and better mixing in the LOX FPB. 相比使用液氧的方案，使用气氧的富燃预燃室在启动、关机过程更迅速、平稳。
- The spectral width was increased from 18nm of normal integrated SLD devices to 37nm of quantum well intermixed devices. 和普通的集成超辐射器件相比，在相近的输出功率下，器件的光谱宽度从18nm提高到了37nm。
