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- The optical band gap energy of CuInS2 thin films, deduced from the optical transmission spectrum, was 1. 50 eV. 结果表明;所制得的样品为四方结构的多晶CuInS_2薄膜;Cu/In比接近化学计量比;其光学禁带宽度为1.;50eV。
- The optical band gap increases from 3.21 eV to 3.25 eV as increasing dopant concentration from 0.01% up to 1%. 薄膜光学带隙随掺杂原子分数的提高从3.;21 eV增大到3
- Results indicate that the optical band gap of the CN x films is decreased with the increasing nitrogen concentration, accompanied with the reflectance increase of the films. 结果表明：随着薄膜中氮含量的增加，碳氮薄膜的光学禁带宽度减小，红外反射率增加。
- Optimal depositing parameters,IR absorption spectroscopy,variation of optical band gap Eopt with x,ESCA results of the a-SixC1-x:H films propeared by glow discharge deposition of SiH_4 and CH_4 mixture are presented. 本文主要介绍了应用SiH_4+CH_4的辉光放电法制备光电性能优良的a-si_xC_(1-x):H薄膜的最佳工艺条件、红外吸收谱、光隙E_(opt)同x的关系以及ESCA测量结果。
- XPS results showed that a stoichiometric CuInS2 film could be obtained when cCu/ cIn ratio in solution was 1.25, for which the absorption coefficient was > 104 cm-1 and the optical band gap Eg was 1.45 eV. 通过XPS测定薄膜表面的化学组成证明当cCu2+/cIn3+=1.;25时;CuInS2薄膜接近其标准的化学计量组成。 此时薄膜的吸收系数大于>104cm-1;禁带宽度Eg为1
- Effect of nitrogen pressure on structure and optical band gap of copper nitride thin films 氮分压对氮化铜薄膜结构及光学带隙的影响
- IR Absorbance and Optical Band Gap of C:F:H Films Deposited with Microwave ECR-CVD Method 微波ECR-CVD法制备a-C:F:H膜的红外吸收及其光学带隙
- A novel BWO with photonic band gap structure[J]. 引用该论文 陈波;钱宝良;钟辉煌.
- optical band gap 光禁带
- It also showed that the optical absorption edge of the annealed film appeared shifted towards the longer wavelength side and the band gap decreased by 0. 光学性质显示退火处理的薄膜吸收边缘明显的向长波的方向移动,发生红移现象,而且禁带宽度减少了0。
- Photonic crystals are a new kind of materials with photonic band gap. 光子晶体是一种具有光子带隙的新型功能材料。
- A novel photonic band gap (PBG) structure is presented in this paper. 提出一种新型微带光子带隙结构。
- Indium nitride (InN), with its wurtzite crystal structure and 0.7 eV direct band gap, is a promising III-V compound semiconductor for high-frequency and high-speed devices and optical communication. 氮化铟材料拥有0.;7电子伏特的直接能隙，被预期能运用在高频高速的元件和光通讯的材料上。
- The results show that these two models can qualitatively explain the AGN variability in the optical band. 结果表明：这两种模型是定性解释活动星系核光学波段光变的合理模型。
- But CIS possesses band gap energy equal to 1.04eV, which is not within the maximum solar absorption region. 太阳光的吸收要求材料的最佳带隙在1.;45eV左右;不过CuInSe_2的带隙为1
- The optical band cap of the films narrows as the content x increases from1.50 eV(x=0)to 0.84 eV(x=10 at.%)in investigated contents. 在研究的组分范围内;薄膜的光学带隙随Cr 组分的增大而变窄;由1.;50 eV(x=0)减小到0
- Our results demonstrate that lattices compounding can create broad complete photonic band gap. 设计了几种一维光子晶体光通信器件。
- The multi-band photometry monitorings also show that the common behavior in the optical band is that AGN become bluer when they brighten. 多波段的相关性监测也表明活动星系核在光学波段的普遍情况是当它们变亮时会变蓝。
- The reduction of Si band gap and the enhancement of light intensity under external tensile strain are observed. 在施加外加的伸展应力之下，我们观察到矽的能隙缩减还有光强度的增加。
- Tunable band gap is a new and important field in photonic crystals research because of many potential applications. 可调光子晶体由于其潜在的应用价值成为现今光子晶体研究中的一个热点。
