您要查找的是不是：
- molecular beam method [化] 分子束法
- Mg contents of Zn_ 1-x Mg_xO film grown on A_sapphire substrates by molecular beam epitaxy were measured by inductively coupled plasma (ICP) method. 利用电感耦合等离子体(ICP)装置对分子束外延(MBE)法在Sapphire衬底上生长的Zn1-xMgxO薄膜的Mg组分进行了测试.
- Sticking Coefficient of As in molecular beam epitaxy of HgCdTe [J]. As在HgCdTe分子束外延中的表面粘附系数.;红外与毫米波学报);
- SrTiO3(STO), BaTiO3(BTO) and Ba0.6Sro. 4TiO3(BST)ferroelectric thin films were grown epitaxilly on SrTiO3(100) single crystal substrates by the laser molecular beam epitaxy(LMBE) method. 利用激光分子束外延技术(LMBE)在SrTiO3(100)单晶基片上外延生长SrTiO3(STO)、BaTiO3(BTO)、Ba0.;6Sr0
- We propose a method by which periodic two dimensional arrays of identical metal clusters of nanometer size and spacing could be spontaneously obtained by using standard molecular beam epitaxy. 我们提出了利用分子束外延的自组织生长过程大面积制备二维周期性纳米金属团簇阵列的一种方法。
- I will discuss how Molecular Beam Epitaxy (MBE) was invented, its current status, and future developments. 我将介绍分子束磊晶技术（ MBE ）的发明经过、现况、和将来的发展。
- Gaussian beam method is based on the dynamic raytracing and paraxial approximation method. 高斯束方法是在动力学射线追踪和旁轴近似方法基础上发展而来的。
- In particular, she has pioneered the use of molecular beam epitaxy (MBE) technology in China. 惊诧于这样的人还不是中国的院士，实在很烦。
- To narrow the molecular beam (water group), adjusting the molecular structure of volatility. 缩小分子束(水分子集团)，调整分子结构波动。
- The calibration errors of FBG strain sensor using the usually equal-strength beam method are analyzed and modified from the standpoint of mechanics. 从力学角度出发,对实验室中常用的应用等强度梁的标定方式的误差进行分析与修正。
- A thin film electroluminescent (EL) cell having Au/ZnSe:Mn/n-Ge structure has been fabricated by molecular beam epitaxy (MBE). 用分子束外延法制成了具有Au/ZnSe:Mn/n-Ge结构的电致发光单晶膜,最低起亮电压为6V。
- The dynamics of thermal reaction of Ge(111) surface with chlorine molecules has been studied using molecular beam relaxation spectrometry (MBRS). 本文用分子束弛豫谱研究了Ge(111)表面与氯分子热反应动态学。
- BaTiO3(BTO)ferroelectric thin films were deposited directly on Si(100) single crystal substrates with laser molecular beam epitaxy(LMBE). 利用激光分子束外延(LMBE)方法在Si(100)基片上直接生长BaTiO3(BTO)铁电薄膜。
- AlAs/GaAs/InGaAs double barrier-single well structures are grown on semi-insulating GaAs substrates by molecular beam epitaxy. 用分子束外延技术在半绝缘GaAs衬底上生长制备了不同结构的AlAs/GaAs/InGaAs两垒一阱RTD单管.
- O-chlorophenol/water mixed clusters were studied using both laser multiphoton ionization mass spectrum and supersonic pulsed molecular beam technique. 应用激光多光子电离质谱与超声脉冲分子束技术研究邻氯苯酚-水的混合团簇。
- Finally, we present the lasing properties of InAs/GaAs QD lasers with InGaP cladding layers grown by solid-source molecular beam epitaxy. 最后我们使用固态分子束磊晶器，以砷化铟/砷化镓量子点作为活性层，磷化铟镓作为被覆层制作半导体雷射并量测其特性。
- Perovskite oxide thin films and heterojunctions have been fabricated by laser molecular beam epitaxy controlled in atomic scale. 用激光分子束外延,原子尺度控制的外延生长出多种钙钛矿氧化物薄膜和异质结。
- Taking into account the base beam damping effect, this paper has improved current measurement theory and presents a measurement equation based on flexural resonating cantilever beam method. 考虑到复合试件基底层材料阻尼的影响，本文对测量理论进行了改进，得到了考虑基底层阻尼影响的悬臂梁弯曲共振法测量方程。
- Molecular beam epitaxy (MBE) is an ultra-high-vacuum (UHV)-based technique for producing high quality epitaxial structures with monolayer (ML) control. 分子束外延（Molecular beam epitaxy, MBE）是一种在超高真空条件下，使分子或原子按晶体排列一层层地“长”在基片上形成薄膜的技术。
- In working out static correction, the beam method is adopted to calculate the traveltime between the shot spot and the detection spot.In this way, the datum level correction quantity can be obtained. 求取静校正时采用射线法计算炮点到检波点的旅行时，从而得到基准面校正量。
