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- molecular beam Stark effect 分子束斯塔克效应
- The stark effect in SRS of C 2H 2 has been investigated. 本文研究了 C2 H2 分子受激 Raman光谱 (SRS)中的光学斯塔克 (Stark)效应 ;同时还研究了激光功率以及单一转动态量子数 J与 Stark效应的关系 .
- Sticking Coefficient of As in molecular beam epitaxy of HgCdTe [J]. As在HgCdTe分子束外延中的表面粘附系数.;红外与毫米波学报);
- An empirical quadratic Stark effect constant C4 = 5.0 X 10-14cm4/sec was determined from these data. 由此定出一个经验上的二级斯塔克效应常数C_4=5.;0×10~(-14)cm~4/sec。
- Experimental Study on the Stark Effect of Caesium Rydberg Atoms in an Electric Fields[J]. 引用该论文 胡正发;柳晓军;龚顺生;詹明生;周士康.
- I will discuss how Molecular Beam Epitaxy (MBE) was invented, its current status, and future developments. 我将介绍分子束磊晶技术（ MBE ）的发明经过、现况、和将来的发展。
- Theory of Stark effect modulation with Doppler broadening is analyzed by the semiclassical theory. 用半经典理论分析了含多勒普加宽的斯塔克效应调制。
- In particular, she has pioneered the use of molecular beam epitaxy (MBE) technology in China. 惊诧于这样的人还不是中国的院士，实在很烦。
- To narrow the molecular beam (water group), adjusting the molecular structure of volatility. 缩小分子束(水分子集团)，调整分子结构波动。
- Modulators: Multiple quantum well structures, quantum confined Stark effect; SEED. Waveguide couplers, switches, modulators. 光调变器：多重量子井结构，量子局限史托克效应，自电光效应元件，波导耦合器，光开关，光调变器。
- The influence of a uniform electric field on the motion and energy of the electrons in atoms is known as the Stark effect. 均匀电场对原子中电子的运动和能量的影响就是众所周知的斯塔克（stark）效应。
- A thin film electroluminescent (EL) cell having Au/ZnSe:Mn/n-Ge structure has been fabricated by molecular beam epitaxy (MBE). 用分子束外延法制成了具有Au/ZnSe:Mn/n-Ge结构的电致发光单晶膜,最低起亮电压为6V。
- The dynamics of thermal reaction of Ge(111) surface with chlorine molecules has been studied using molecular beam relaxation spectrometry (MBRS). 本文用分子束弛豫谱研究了Ge(111)表面与氯分子热反应动态学。
- Modulators : Multiple quantum well structures, quantum confined Stark effect; SEED. Waveguide couplers, switches, modulators. 多重量子井结构，量子局限史托克效应，自光电效应元件，波导耦合器，光开关，光调制器。
- BaTiO3(BTO)ferroelectric thin films were deposited directly on Si(100) single crystal substrates with laser molecular beam epitaxy(LMBE). 利用激光分子束外延(LMBE)方法在Si(100)基片上直接生长BaTiO3(BTO)铁电薄膜。
- According to the semiclassical dispersion theory of ac Stark effect, we calculate laser induced energy level shift and broadening for Cl atom. 应用半经典的微扰论方法计算出了氯原子光诱导能级移动和增宽,其大小与光强成正比。
- AlAs/GaAs/InGaAs double barrier-single well structures are grown on semi-insulating GaAs substrates by molecular beam epitaxy. 用分子束外延技术在半绝缘GaAs衬底上生长制备了不同结构的AlAs/GaAs/InGaAs两垒一阱RTD单管.
- Mg contents of Zn_ 1-x Mg_xO film grown on A_sapphire substrates by molecular beam epitaxy were measured by inductively coupled plasma (ICP) method. 利用电感耦合等离子体(ICP)装置对分子束外延(MBE)法在Sapphire衬底上生长的Zn1-xMgxO薄膜的Mg组分进行了测试.
- O-chlorophenol/water mixed clusters were studied using both laser multiphoton ionization mass spectrum and supersonic pulsed molecular beam technique. 应用激光多光子电离质谱与超声脉冲分子束技术研究邻氯苯酚-水的混合团簇。
- Finally, we present the lasing properties of InAs/GaAs QD lasers with InGaP cladding layers grown by solid-source molecular beam epitaxy. 最后我们使用固态分子束磊晶器，以砷化铟/砷化镓量子点作为活性层，磷化铟镓作为被覆层制作半导体雷射并量测其特性。
