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- Enhances unceasingly which during the computation ability, because the new memory cell structure appearance, dodges the memory monolithic packing density to achieve 4GB hopefully quickly. 在计算能力不断提高的同时，由于新型存储单元结构的出现，快闪存储器的单片存储密度有望达到4GB。
- memory cell structure 存储单元结构
- A transistor memory cell can be made with any number of terminals. 晶体管存贮单元端点的数量是不受限制的。
- Porter revealed the true complexity of cell structure. 波特如实地揭示了细胞结构的复杂性。
- Die temperature has great effects on the cell structure and foam properties. 机头发泡口模温度对发泡体结构和性能有关键性影响。
- Characterize standard logic cells and memory cells. 提取标准逻辑单元和存储电路的参数。
- The memory cells may be multistate memory cells. 该存储单元可以是多状态存储单元。
- Learn about cell structure and function by viewing QuickTime movies and interacting with 3D worlds. 三维细胞结构演示动画，演示了细胞内结构。
- This problem can occur if 70 (binary 1000110) has been changed to 6 (binary 000110) by an unstable memory cell. 如果不稳定的内存单元已将70(二进制为1000110)更改为6(二进制为000110),则会发生此问题。
- The dislocation pattern around the crack tips of transgranular and granular presents misorientation cell structure. 穿晶裂纹与沿晶裂纹尖端的位错组态均为胞结构；
- The generation mechanism of stress induced leakage current( SILC) in flash memory cell is studied by experiments. 通过实验研究了闪速存储器存储单元中应力诱生漏电流(ILC)产生机理.
- Lomas explained."In the liver, the protein distorts normal cell structure and leads to cell death. 肝脏中，蛋白质扭曲了正常细胞构造并导致细胞死亡；
- The changes in cell structure were reversible and the effect of KCl could be offset by CaCl2. 此种结构改变是可逆的，CaCl2可抵消KCl的这种作用。
- The use of the program in 8237 will realize the magic memory modules of the data copied to several other memory cell. 在该程序中利用8237实现了将内存中魔几个单元的数据复制到另外几个存储单元。
- Articles and research papers on cell division, cell structure, animal and plant cell biology and cell cycles. 文章和研究论文，对细胞分裂，细胞结构，动物和植物细胞生物学和细胞周期。
- US Patern No. 5834806, 1998, “Raised-Bitline, Contactless, Trenched, Flash Memory Cell”, by R.L. Lin, C.H.-H Hsu, M.S. Liang. “极快速拟动态非挥发性快闪记忆体之阵列结构与其执行编码时临界电压自我校正方法”;林瑞霖;徐清祥.
- Physical addresses are used to address memory cells in memory chips. 物理地址是用来真正访问内存单元的地址。
- The sheet possessed excellent cell structure when the contents of foaming telogen and nucleator were 8 phr and 5 phr respectively. 当发泡调节剂和成核剂的用量分别为8份和5份时,板材能形成优良的泡孔结构。
- Unused memory cells following the BELL&RET command are considered free. 在电铃&浸水使柔软指令之后的不用记忆单元是考虑过的免费。
- The multiplication of UU within the trophoblasts may disrupt cell structure which could interfere the normal fetal development. 滋养层细胞内UU的增殖，可诱发相应的细胞结构的改变，以致干扰胎儿的正常发育。
