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- VMOS? Vertical Metal Oxide Semiconductor? 垂直金属氧化物半导体?
- FPGAs rely on the ubiquitous transistor-based technology called complementary metal oxide semiconductor (CMOS). FPGA使用的材料是互补式金属氧化物半导体（CMOS）技术，这是种随处可见的电晶体技术。
- SnO_2 is a wide-band oxide semiconductor with a bandwidth of 3.6~4.0eV and a tetragonal rutile crystal structure. SnO_2是一种对可见光透明的宽带隙氧化物半导体;禁带宽度3.;7-4
- Therefore, from the material point of view, is a zinc oxide varistors, "II-VI oxide semiconductor nation. 在中国台湾，压敏电阻器是按其用途来命名的，称为"突波吸收器"。压敏电阻器按其用途有时也称为“电冲击（浪涌）抑制器（吸收器）”。
- Such is the pace of change that CCDs are themselves being overtaken by CMOS (Complementary Metal Oxide Semiconductor) technology. 随著创新的脚步电荷耦合元件被互补金属氧化半导体技术所取代。
- This configuration forces the PDC master to announce itself as a reliable time source and uses the built-in complementary metal oxide semiconductor (CMOS) clock. 这种配置会强制PDC主机将它自身宣布为可靠的时间源,从而使用内置的互补金属氧化物半导体(CMOS)时钟。
- The agreement includes Complementary Metal Oxide Semiconductor (CMOS) and Silicon-on-Insulator (SOI) technologies as well as advanced semiconductor research and design enablement transitioning at the 45-nanometer generation. 该协议包括互补金属氧化物半导体(CMOS)以及绝缘硅片(SOI)技术以及转向45纳米级别高端半导体的研究和设计。
- The entire process of building a sound chip is fully compatible with the standard industry process for semiconductor manufacturing, called complementary metal oxide semiconductor, or CMOS. 声音晶片的全部制程，是完全相容于互补式金属氧化物半导体（cmos）的工业标准制程。
- The perspective of micro/nano scale monolithic integration of optical devices and electronic devices on a single chip by standard complementary mental oxide semiconductor (CMOS) technologies is also presented. 同时,还展示了用标准互补金属氧化物半导体(CMOS)技术,实现硅基光子器件和电子器件在同一基片上微纳集成的巨大前景。
- The recent development of pulse modulator is to use solid-state switches such as IGBT (Insulated Gate Bipolar Transistor ) and power MOSFET(Metal Oxide Semiconductor Field Effect Transistor)etc. as substitute for hydrogen thyratrons. 用IGBT(绝缘栅双极性晶体管)和功率MOSFET(金属氧化物半导体场效应管)等固态功率开关器件代替氘闸流管开关是脉冲调制器技术的最新发展方向。
- The measuring technique and results of sub-pixel measurement accuracy of complementary metal oxide semiconductor (CMOS) imager are researched in this paper in order to give references for correlative systems. 主要对互补金属氧化物半导体(CMOS)图像传感器亚像元细分精度的测试方法和测试结果进行研讨。
- A microchip that costs $5 to make from silicon, using the standard complementary metal oxide semiconductor (CMOS) process, would cost about $500 to fabricate from indium phosphide. 使用标准的互补式金氧半导体（CMOS）制程，以矽做的微晶片成本如果是五美元，以磷化铟制作则得花上500美元。
- CMOS - Complementary Metal Oxide Semiconductor 补充金属氧化物半导体
- metal oxide semiconductor transistor load mos负载晶体管
- High Density Metal Oxide Semiconductor 高密度金属氧化物半导体
- metal oxide semiconductor integrated circuit 金属氧化物半导体集成电路
- Write high ( Metal Nitride Oxide Semiconductor FET) 写入高态(氮化金属氧化半导体场效应管)
- How can you get rid of this oxide coating? 你们该怎样除去这些氧化皮？
- Write low ( Metal Nitride Oxide Semiconductor FET) 写入低态(氮化金属氧化半导体场效应管)
- sos complementary metal oxide semiconductor 蓝宝石上硅互补金属氧化物半导体
