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- GaP:N liquid phase epitaxy material photoluminescence light-emitting region. 标 签 GaP:N液相外延材料 光致发光 发光区域。
- GaAs-Al_xGa_(1-x)As heterostructure grown by liquid phase epitaxy (LPE) has beenstudied by Auger electron spectroscope. 采用俄歇电子能谱仪(AES)对液相外延生长的GaAs-AlxGa_(1-x)As异质结构进行了研究.
- Cr3+-Activated YAG Monocrystalline Luminescent Layers Grown by Liquid Phase Epitaxy[J]. 引用该论文 饶海波;成建波;黄宗琳;李军建;方官久.
- LIQUID PHASE EPITAXY OF InSb_(1-x)Bi_x InSb_(1-x)Bi_x的液相外延
- INFLUENCE OF MERCURY PRESSURE ON LIQUIDUS TEMPERATURE AND MOLE FRACTION OF (Hg,Cd)Te LIQUID PHASE EPITAXY 汞压对液相外延(Hg,Cd)Te的液相线及组份的影响
- Liquid Phase Epitaxy (LPE) of CaAs-Ca_(1-x) Al_x As Double Heterostructure (DH) Lasers GaAs-Ga_(1-x)AI_xAs双异质结激光器的液相外延
- THE OPTICAL PHONONS, PLASMON AND LO PHONON-PLASMON COUPLING MODE IN MIXED CRYSTAL GaAs_(1-x)P_x GROWN BY LIQUID PHASE EPITAXY 液相外延GaAs_(1-x)P_x混晶的光学声子、等离子体激元和LO声子-等离子体激元耦合模
- liquid phase epitaxy LPE 液相取向附, 液相外延
- liquid phase epitaxy 液相外延
- liquid phase epitaxy (LPE) [化] 液相处延
- Preparation of powders for ZnO varistors by liquid phase process. 液相法制备ZnO压敏电阻器粉料。
- The reaction occurs in the liquid phase of the system. 这个反应在液体相位发生。
- High quality GaN film was grown by hydride vapor phase epitaxy(HVPE) using porous AAO as mask. 采用均匀的多孔阳极氧化铝做掩膜在氢化物气相外延设备中生长出高质量的氮化镓膜。
- Preparation of gallium phosphide red luminescence material using liquid phase epitaxial 液相外延制备磷化镓红色发光材料
- Keywords garnet;epitaxial film;liquid phase epitaxial growth;single crystal film; 石榴石;外延膜;液相外延生长;单晶膜;
- When point c is reached, the substance is wholly in the liquid phase. 达c点时，物质全部成为液相。
- Liquid phase took an active part in the gelation of dissolved active sil... 液相参与凝胶与沸石的生长过程,在晶化过程中容易形成聚晶。
- At the injection well both a gas and a liquid phase are present at equilibrium. 在注入井中，气相和液相都处于平衡状态。
- Magnesium titanate was obtained with special liquid phase precipitation method. 采用特殊液相沉淀法制备了镁的钛酸盐。
- Raman spectra and Photoluminescence spectra are used to investigate the influence of carbon doping on the structural and optical properties of GaN films grown by the hydride vapor phase epitaxy (HVPE). 利用喇曼光谱和光致发光谱 ;对采用氢化气相外延淀积方法在MOCVDGaN衬底上生长的掺碳GaN样品的光学性质进行了研究 .
