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- The Gray-Brown method has been performed to measure Si/SiO_2 interface state density D(?) near conduct and valence band, also the average interface state density Dit. 本工作建立了能准确测量MOS电容禁带两端界面态密度分布和平均界面态密度的Gray-Brown法(简称G-B法),并同高低频C-V法进行了比较,结合Stretch Out(简称S-O)法研究了不同工艺MOS电容的辐照感生界面态特性。
- The analytical model which comprises the temperature compensation for the SiC MOSFET is modified by considering the Gauss model of interface state density and the Poole-Frenkel effect. 考虑界面态电荷高斯分布模型以及Poole-Frenkel效应;对SiC MOSFET补偿电流源模型进行了修正;分析了造成6H-SiC NMOS与PMOS器件补偿电流源变化的原因.
- Discussion shows that the barrier height of Sn/Au HgCdTe contact is pinned at "Bardeen limit" and the interface state density is one magnitude higher than that of the dielectric film HgCdTe interface. 结果表明 ,Sn/Au金属膜 -碲镉汞薄膜 PN器件的电极界面的势垒高度锁定在“Bardeen”限 ,界面密度比介质膜 -碲镉汞的大一个量级
- According to defect chemistry of BaTiO3 semiconducting ceramics,the composition of the interface state was researched.Amethod of the interface state density measurement was proposed. 同时对钛酸钡系PTCR半导瓷界面态的组成进行了研究，并提出一种直接测量界面态密度的方法。
- interface state density 界面态
- When the generalized uncertainty relation is considered the new equation of quantum state density is obtained based on Liouville's theorem. 当考虑了广义不确定关系后，在刘维定理的基础上采取了新的量子态密度方程，我们发现黑洞视界附近的量子态数目变成了有限。
- Surface discharge in power cable accessories is correlation with interface pressure and interface state. 试验研究了电缆附件与电缆主绝缘结合界面的沿面放电 ,认为放电电压与界面压强和界面状态密切相关。
- The degradation induced by interface state is one main reason for failure occurs in deep-sub-micron MOS devices. 界面态引起的器件特性的退化是深亚微米器件失效的一个重要因素。
- Physical mechanisms such as carrier trapping, interface state filling, and temperature related deterioration are revealed. 揭示了系统的纳米晶存储物理机制，例如电荷俘获、界面态填充和温度特性。
- It shows that the bias in the post-irradiation recovery period and the ratio of the interface state to the electron tunneling influence the recovery rate. 模拟结果表明：退火过程所加栅偏压的大小以及隧道电子效应与建立的界面态所占比例的不同影响器件的恢复率。
- Taking into account the effect of the generalized uncertainty principle on the quantum state density, the difficulty of the divergence of the state density near the event horizon in the brick-wall model is removed. 用广义不确定原理对量子态密度进行修正;克服了brick-wall模型中视界附近态密度的发散困难;该薄层可以紧贴在事件视界上.
- For all the calculated physical properties, the results of phonon spectra, state density, specific heat and Debye temperature are better than that of Griinsisen constant and expansion coefficient. 在所预测的基本物性中，声子谱、态密度、比热和德拜温度的计算值与实验结果符合得较好，而格律乃森常数和热膨胀系数的计算值与实验结果符合得稍差。
- The diamond film grown on the interface consists of primary nucleus laver and crystalline grainThe interface state as well as growth process of diamond at different regions on a sample or different samples is not same. 胚芽层有三种形态; 同一试样上的不同部位或不同试样上的界面状态及生长过程是不同的。
- Effects of coupling agent (KH550) and maleic anhydride graft polypropylene (MPP) on the interface state and rheological properties of the polypropylene/glass bead (PP/GB) composite were studied. 摘要研究了偶联剂(KH550)和马来酸酐接枝聚丙烯(MPP)表面偶联反应对聚丙烯(PP)/玻璃微珠(GB)复合材料界面形态和流变性能的影响。
- On the basis of this result, the phonon structure is studied, along with calculation of the energy levels and state densities of phonons. 以此为基础,研究了简立方纳米晶体颗粒的声子结构,计算了其声子能级和声子态密度。
- The interface states and valence band offsets of Si/GaAs heterojunction have been studiedby the self-consistent EHT method. 本文报道用自洽EHT方法研究Si/GaAs异质结界面态分布和价带不连续性。
- Based on SEM, EPA and ESCA, CF/GF hybrid reinforced PMMA interfacial state and structure are characterized. 本文采用SEM、EPA、ESCA等方法表征医用CF/GF混杂增强PMMA的界面状态及结构。
- It is assumed that electron tunneling from silicon into oxide and buildup of interface states are the post-irradiation recovery. 假设隧道电子从硅进入氧化层和界面态的建立是辐射效应的恢复机理。
- Typical stressing like under the E-B reverse biasing results in some traps near the E-B spacer oxide and interface states in EB junctions. 传统的反向偏压射极-基极接面驱迫所造成的热载子会在靠近基极和射极接面以及隔离基极-射极的绝缘层上产生接面陷阱(traps)和带电荷的接面能态(interfacestate)，而影响其直流特性上的电性反应。
- Economically, the country is in a very healthy state. 从经济学的观点来说，国家处于很兴旺的状态之中。
