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- High quality GaN film was grown by hydride vapor phase epitaxy(HVPE) using porous AAO as mask. 采用均匀的多孔阳极氧化铝做掩膜在氢化物气相外延设备中生长出高质量的氮化镓膜。
- Raman spectra and Photoluminescence spectra are used to investigate the influence of carbon doping on the structural and optical properties of GaN films grown by the hydride vapor phase epitaxy (HVPE). 利用喇曼光谱和光致发光谱 ;对采用氢化气相外延淀积方法在MOCVDGaN衬底上生长的掺碳GaN样品的光学性质进行了研究 .
- Structural properties of epitaxially laterally overgrown (ELO) GaN on patterned GaN "substrates" by hydride vapor phase epitaxy (HVPE) have been investigated. 研究了在刻有图形的GaN“衬底”上用HVPE方法侧向外延生长 (ELO)GaN的结构特性。
- Hydride Vapor Phase Epitaxy (HVPE) HVPE
- X-ray Analysis of GaN Film Grown by Hydride Vapor Phase Epitaxy X射线分析氢化物汽相外延法生长GaN薄膜
- Design and making of hydride vapor phase epitaxy system for growing GaN GaN氢化物气相外延生长系统的设计与制作
- Hydrogen induced changes on hydride vapor phase epitaxy of GaN growth 氢化气相外延氮化镓生长中气氛的作用研究
- Growing GaN Film by Hydride Vapor Phase Epitaxy with Low Temperature AlN Interlayer 采用低温AlN插入层在氢化物气相外延中生长GaN膜
- Reseach and Prospects on the Techniques of Preparation for Free-standing GaN Substrates by Hydride Vapor Phase Epitaxy 氢化物气相外延自支撑GaN衬底制备技术研究进展
- 7.High quality GaN film was grown by hydride vapor phase epitaxy(HVPE) using porous AAO as mask. 采用均匀的多孔阳极氧化铝做掩膜在氢化物气相外延设备中生长出高质量的氮化镓膜。
- hydride vapor phase epitaxy 氢化物气相外延
- ZnO thin films can be deposited by various methods, such as sputtering, e-beam evaporation, spray pyrolysis, sol-gel, pulsed laser deposition (PLD), metalorganic vapor phase epitaxy (MOVPE), molecular beam epitaxy (MBE), atomic layer epitaxy (ALE), etc. 制备ZnO薄膜的方法有很多，包括：溅射方法(sputtering)、金属有机气相外延(MOVPE)、分子束外延(MBE)、脉冲激光沉积(PLD)、原子层外延(ALE)、等离子体加强化学气相沉积(PECVD)、溶胶-凝胶法(soll-gel)、喷涂热解法(spray pyrolysis)、电子束蒸发法(e-beam evaporation)等等。
- metallo organic vapor phase epitaxy 有机金属汽相外延
- The microstructure and optical properties of epitaxial laterally overgrown (ELO) GaN films on Si (III) substrate by hydrade vapor phase epitaxy (HVPE) have been investigated. 用氢化物气相外延 (HVPE)方法在Si(III)衬底上成功横向外延生长出晶体质量较好的GaN薄膜材料。
- metalorganic vapor phase epitaxy 金属有机物气相外延
- Vapor Phase Epitaxy of Hg_(1-x)Cd_xTe on CdTe substrates 在CdTe衬底上汽相外延Hg_(1-x)Cd_xTe
- Reduced pressure vapor phase epitaxial growth system 减压汽相磊晶生长系统
- Atmospheric pressure vapor phase epitaxial growth system 大气压汽相磊晶生长系统
- At point e, the substance is wholly in the vapor phase. 到e点时，物质全部变为气相。
- vapor phase epitaxy 汽相外延
