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- epitaxial silicon film 外延硅薄膜
- Electrical Properties of Epitaxial Silicon Films Deposited at Low Temperatures by RRH/VLP-CVD RRH/VLP-CVD低温外延硅薄膜的电学性质
- This shows that the impact ionizationeffect increasewith the decreasing of silicon film thickness. 这说明,随着硅膜厚度的减小,器件内部的碰撞离化效应增加。
- A kind of flexible glass capillary wool degras column modified by silicon film was researched. 本文研究了一种硅膜改性弹性玻璃毛细管羊毛脂色谱柱。
- Silicon Film - The layer of silicon on which semiconductor devices are placed. This is located on top of the insulating layer. 顶部硅膜-生产半导体电路的硅层,位于绝缘层顶部。
- epitaxial silicon variable capacitance diode 外延硅变容二极管
- Thickness of Top Silicon Film - The distance found between the face of the top silicon film and the surface of the oxide layer. 顶部硅膜厚度-顶部硅层表面和氧化层表面间的距离。
- ESVCD Epitaxial Silicon Variable Capacitance Diode 晶膜硅变容二极管
- epitaxial silicon controlled rectifier 外延硅可控整流管
- Base Silicon Layer - The silicon wafer that is located underneath the insulator layer, which supports the silicon film on top of the wafer. 底部硅层-在绝缘层下部的晶圆片,是顶部硅层的基础。
- epitaxial silicon controlled rectifer 外延硅可控整流管
- epitaxial silicon variable capacitance d 外延硅变容二极管
- The processing parameters for manufacturing amorphous silicon film were studied.The polycrystalline silicon film was obtained by annealing the amorphous silicon film. 研究了制备性能优良非晶硅薄膜的工艺参数,对薄膜进行高温退火得到多晶硅薄膜。
- With various reaction time, silicon film thickness and adhesion layer, we measured the resistivity, adhesion and grain size.Meanwhile, we fabricated the poly-silicon/Ta/SiO2/Si structure. 其次我们以置换法沈积铜种子层，研究在不同置换时间、矽膜厚度及附著层，其电阻率、附著力、结晶晶相及晶粒大小。
- That was infinitely better than his last film. 这比他上一部电影不知胜过多少倍。
- Using these silicon films as the intrinsic layer,p-i-n solar cells were prepared on SnO2 substrates. The open circuit voltage(Voc) was 0.891V. 以这部分材料作为太阳电池的本征层;在SnO2衬底上制备了p-i-n型太阳电池;电池的初始开路电压(Voc)达到了0.;891V。
- This paper reviews comprehensively the recent development of amor- phous silicon films fabricated by light induced chemical vapour deposition(LCVD). 本文较系统地评述了光诱导化学汽相淀积(LCVD)技术淀积非晶硅薄膜的开发现;
- intrinsic amorphous silicon film 本征非晶硅薄膜
- N type and P type 4＂-6＂silicon epitaxial wafers. 4＂-6＂N型和P型各类硅外延片。
- She has a book full of cuttings about her film. 她有一本书贴满了关于她的一些影片的剪报。
