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- The visible-light responding region was extended by Mo6+ doping because the doping of Mo6+ could introduce crystal cavities into TiO2 nanoparticles and reduce its energy band gap. 利用Mo6+的掺杂在TiO2中引入缺陷,从而扩大TiO2催化剂的光谱响应范围。
- The energy band gaps of sputtered Cr03 are approximately 1. leV(AD) and 1. 4eV (HT). 其中第三种溅射铬-氧薄膜(C_rO3)的能带间隙约1.;leV (A-D)和1
- energy band gap 禁带宽度
- A novel BWO with photonic band gap structure[J]. 引用该论文 陈波;钱宝良;钟辉煌.
- The optical band gap energy of CuInS2 thin films, deduced from the optical transmission spectrum, was 1. 50 eV. 结果表明;所制得的样品为四方结构的多晶CuInS_2薄膜;Cu/In比接近化学计量比;其光学禁带宽度为1.;50eV。
- But CIS possesses band gap energy equal to 1.04eV, which is not within the maximum solar absorption region. 太阳光的吸收要求材料的最佳带隙在1.;45eV左右;不过CuInSe_2的带隙为1
- The absorption coefficient,band gap and activation energy of these crystallized a-Si_xC_(1-x):H films decrease whilethe dark conductivity increases. 晶化后的a-Si_xC_(1-x):H膜光吸收系数、光学带隙和电导激活能下降;室温电导率增加.
- Photonic crystals are a new kind of materials with photonic band gap. 光子晶体是一种具有光子带隙的新型功能材料。
- A novel photonic band gap (PBG) structure is presented in this paper. 提出一种新型微带光子带隙结构。
- The average Fermi energy limit for 6k points is-12.45eV. The band gap at the edge of the first Brillouin Zone is 2.31eV. It shows that cellulose trinitrate has an electric conductivity similar to a semiconductor. 六个k点下的平均Fermi能界为-12.;45eV。 在第一Brillouia区边缘的带隙为2
- Spectroscopic ellipsometry indicates that the quantum effect of ZnO quantum dot leads to the fact that the absorption energy of exciton(3.76 eV) is bigger than the band gap of bulk ZnO. SE表征发现ZnO量子点的量子效应导致了ZnO量子点的激子吸收能(3.;76eV)比ZnO体晶的能带隙(3
- But attempts to integrate photonics with silicon-based microelectronics are hampered by the fact that silicon has an indirect band gap,which prevents efficient electron-photon energy onversion. 然而，因为硅是间接带隙半导体，试图把光电子器件集成在硅微电子集成电路上却遇到很大困难。
- This paper analyses the physical sence of effective mass of energy band elec-tron and also discusses its tensor. 本文分析了有效质量的物理意义,并对它的张量性质进行了讨论。
- Application of the quantum interference effect in designing energy band structure of the infrared photodetector[J]. 引用该论文 连洁;王青圃;程兴奎;张飒飒;姜军;张瑞峰;周均铭;黄绮.
- The optical band gap increases from 3.21 eV to 3.25 eV as increasing dopant concentration from 0.01% up to 1%. 薄膜光学带隙随掺杂原子分数的提高从3.;21 eV增大到3
- Our results demonstrate that lattices compounding can create broad complete photonic band gap. 设计了几种一维光子晶体光通信器件。
- Each distinct atomic state may split into a series of closely spaced electron states in the solid, to form what is termed an electron energy band. 固体中每个分立的原子态会劈裂成一系列的紧密排列的电子态,进而形成了所谓的电子能带。
- The reduction of Si band gap and the enhancement of light intensity under external tensile strain are observed. 在施加外加的伸展应力之下，我们观察到矽的能隙缩减还有光强度的增加。
- The sensitizer whose energy band matched with sunlight was selected to raise the photoelectric conversion efficiency and reduce the cost. 应用分光光度计对大量天然色素进行光谱表征,从中选择与太阳光匹配的光敏化剂,以提高太阳能电池的光电转化率及降低其成本。
- Tunable band gap is a new and important field in photonic crystals research because of many potential applications. 可调光子晶体由于其潜在的应用价值成为现今光子晶体研究中的一个热点。
