您要查找的是不是：
- Indium nitride (InN), with its wurtzite crystal structure and 0.7 eV direct band gap, is a promising III-V compound semiconductor for high-frequency and high-speed devices and optical communication. 氮化铟材料拥有0.;7电子伏特的直接能隙，被预期能运用在高频高速的元件和光通讯的材料上。
- The tunability of directional band gap in a two-dimensional photonic crystal of air holes in a semiconductor matrix is demonstrated numerically, using the plane wave expansion calculation. 采用平面波展开法证实了填充液晶的二维三角形分布的空气孔光子晶体方向能隙的可调节性。
- The Development of Wide Band Gap Semiconductor device 宽禁带半导体器件的发展
- Keywords Aluminm nitride;Wide band gap semiconductor;Heteroepitaxy; 氮化铝;宽禁带半导体;异质外延;
- Preparation and application of AlN films with wide band gap semiconductor 宽带隙半导体AlN薄膜的制备及应用
- Preparation and application of AIN films with wide band gap semiconductor 宽带隙半导体AIN薄膜的制备及应用
- narrow band gap semiconductor 窄带隙半导体
- wide band gap semiconductor 宽禁带半导体
- A novel BWO with photonic band gap structure[J]. 引用该论文 陈波;钱宝良;钟辉煌.
- Due to quantum confinement effect,band gap of semiconductor nanocrystals(NCs) is dependent on the particle size. 由于量子限域效应,半导体纳米晶的能带宽随粒子大小而改变。
- The average Fermi energy limit for 6k points is-12.45eV. The band gap at the edge of the first Brillouin Zone is 2.31eV. It shows that cellulose trinitrate has an electric conductivity similar to a semiconductor. 六个k点下的平均Fermi能界为-12.;45eV。 在第一Brillouia区边缘的带隙为2
- Photonic crystals are a new kind of materials with photonic band gap. 光子晶体是一种具有光子带隙的新型功能材料。
- A novel photonic band gap (PBG) structure is presented in this paper. 提出一种新型微带光子带隙结构。
- His current research will focus more on wide gap semiconductor MOCVD growth, inter disciplinary materials investigation and nano-scale device development. 现在的研究课题主要是著重在宽能隙半导体金属氧化物化学气相磊晶的成长，多学科材料研究及奈米器件研发。
- His currente research will focus more onw ide gap semiconductor MOCVD growth, inter disciplinary materials investigation and nano-scalehdevice Network evelopment. 现在的研究课题主要是著重在宽能隙半导体金属氧化物化学气相磊晶的成长，多学科材料研究及奈米器件研发。
- The optical band gap energy of CuInS2 thin films, deduced from the optical transmission spectrum, was 1. 50 eV. 结果表明;所制得的样品为四方结构的多晶CuInS_2薄膜;Cu/In比接近化学计量比;其光学禁带宽度为1.;50eV。
- The optical band gap increases from 3.21 eV to 3.25 eV as increasing dopant concentration from 0.01% up to 1%. 薄膜光学带隙随掺杂原子分数的提高从3.;21 eV增大到3
- But CIS possesses band gap energy equal to 1.04eV, which is not within the maximum solar absorption region. 太阳光的吸收要求材料的最佳带隙在1.;45eV左右;不过CuInSe_2的带隙为1
- Our results demonstrate that lattices compounding can create broad complete photonic band gap. 设计了几种一维光子晶体光通信器件。
- The reduction of Si band gap and the enhancement of light intensity under external tensile strain are observed. 在施加外加的伸展应力之下，我们观察到矽的能隙缩减还有光强度的增加。
