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- current gain factor 电流增益因数
- For logic devices, the incremental current gain is very important. 对于逻辑器件来说，提高电流增益是非常重要的。
- Features: Low VCE(sat),excellent DC current gain characteristics. 特点:饱和压降低，极好的直流电流增益特性好。
- Features: Low saturation voltage, high DC current gain. 特点:饱和压降低；直流电增益高。
- Features: Low VCE(sat), excellent DC current gain characteristics, wide SOA. 特点:饱和压降低,极好的直流电流特性,宽阔的安全工作区。
- If the level of residual noise is smaller than the NMT, the human ear cannot perceive the corrupting noise.In this situation the gain factor is set to unity. 相反的，如果残留杂讯比听觉遮蔽阈值大，则人耳听得到该杂讯，因此将增益因子调整小一点，使得干扰杂讯得以被压抑。
- The lower bound on gain factor is obtained by keeping the speech distortion smaller than the residual noise.Accordingly, the corresponding lower bound on the NMT is also obtained. 我们限制语音失真必须小于残留杂讯为准则，便可以得到增益因子的下限值，因此其对应的杂讯遮蔽阈值也会得到一个下限值；
- Features: High DC current gain and excellent hFE linearity,low saturation voltage. 特点：直流电流增益高，放大线性好,饱和压降低。
- Features: High DC current gain, excellent hFE linearity, low saturation voltage. 特点:直流电流增益高，放大线性好，饱和压降低。
- Those effects result in a non-ideal G/R base leakage current thus decrease the output current gain. 譬如在基极电流上产生非理想的复合漏电流，而造成电流増益的下降。
- Features: High DC current gain),low VCE(sat),large collector power dissipation,wide SOA. 特点:直流电流增益高,饱和压降低,集电极耗散功率大,,安全工作区宽。
- Features: Low VCE(sat),excellent DC current gain characteristics, complements the 2SD2118(3DG2118). 特点:饱和压降低,极好的直流电流增益特性，与2SD2118(3DG2118)互补。
- By using Raman-Maxwell-Bloch equations, we have calculated the gain factor and energy conversion efficiency of quasi-stationary stimulated electronic Raman scattering with focused broadband pump laser. 本文采用Raman-Maxwell-Bloch方程;计算了宽频带聚焦泵浦准稳态受激电子喇曼散射的增益因子和能量转换效率.
- Features:High DC current gain and excellent hFE linearity，low saturation voltage. 特点：直流电流增益大,放大特性好,饱和压降低。
- Features: High DC current gain, low saturation voltage，high col lector power dissipation. 特点:高直流电增益,饱和压降低,高集电极耗散功率。
- Many factors, such as moderator, material of moderator cell, the shape of cell and so on, which would affect the nuclear heating and gain factor, were calculated and optimized for the CNS in CARR. 对影响CARR冷中子源核发热和冷中子增益的各种因素（如慢化剂、冷包材料、冷包形状等）进行了计算和优化选择。
- Low-level human body model(HBM)ESD stresses were imposed on microwave low noise amplifier NPN silicon epitaxial transistor 2SC3356; it was shown that the DC current gain hFE degraded gradually with the increment of the times of ESD stresses. 从CB管脚对微波低噪声NPN晶体管2SC3356施加低电压人体模型(HBM)的ESD应力;发现;随着ESD应力次数的增加;器件的放大特性hFE逐渐退化;并且当电压达到一定水平;多次的ESD可以使器件失效.
- The CE circuit is widely favored since it can be designed for good voltage and current gains. 电路得到广泛的使用,因为它能获得高电压增益和高电流增益。
- The relation between modifying of BHF and error of the blank draw-in is built by introducing time series analysis, and the gain factors are identified by using non-linear least square solver. 引入时序分析法，将压边力的调整与反映工件成形质量的法兰边的吸入量误差联系起来，同时应用非线性最小二乘法识别出增益系数。
- The GNU Arch revision control system is currently gaining popularity. GNU Arch修改控制系统目前很受欢迎。
