您要查找的是不是：
- core memory cell 磁心存储匹元
- The first core memory was envisioned in 1948. 在1948年第一个磁芯存贮器问世。
- A pulse to gate the output of a core memory sense amplifier into a trigger in a register. 将磁心存储器读出放大器的输出选通到寄存器的触发器中的一种脉冲。
- A transistor memory cell can be made with any number of terminals. 晶体管存贮单元端点的数量是不受限制的。
- Characterize standard logic cells and memory cells. 提取标准逻辑单元和存储电路的参数。
- The memory cells may be multistate memory cells. 该存储单元可以是多状态存储单元。
- A pulse to gate the output of a core memory sense amplifier into a triggerin a register. 将磁心存储器读出放大器的输出选通到寄存器的触发器中的一种脉冲。
- This problem can occur if 70 (binary 1000110) has been changed to 6 (binary 000110) by an unstable memory cell. 如果不稳定的内存单元已将70(二进制为1000110)更改为6(二进制为000110),则会发生此问题。
- The generation mechanism of stress induced leakage current( SILC) in flash memory cell is studied by experiments. 通过实验研究了闪速存储器存储单元中应力诱生漏电流(ILC)产生机理.
- The use of the program in 8237 will realize the magic memory modules of the data copied to several other memory cell. 在该程序中利用8237实现了将内存中魔几个单元的数据复制到另外几个存储单元。
- US Patern No. 5834806, 1998, “Raised-Bitline, Contactless, Trenched, Flash Memory Cell”, by R.L. Lin, C.H.-H Hsu, M.S. Liang. “极快速拟动态非挥发性快闪记忆体之阵列结构与其执行编码时临界电压自我校正方法”;林瑞霖;徐清祥.
- The mirror image position plan through saves each bit memory in an insulation grid both sides method in each memory cell two bits. 镜像位方案通过把每个比特存储在一个绝缘栅两端的方法在每个存储单元中存储两个比特。
- Of course since rendering is done by the Blender rendering engine in core memory and by the main CPU of your machine, a graphic card with hardware acceleration makes no difference at rendering time. 当然，由于渲染是在主存和CPU上进行的，故带硬件加速的显卡对于渲染时间的缩短并没有帮助。
- One of the main difficulties of quantum computation is that decoherence destroys the information in a quantum computer memory cell. 量子计算机存储单元的相干脱散，破坏量子态中的信息，是量子计算机难以实现的主要原因之一。
- Reading the charges stored on the floating gate of a memory cell is one of the most critical operations in an EEPROM device. 设计者常常要在灵敏放大器的面积、功耗以及读数据的速度之间折衷考虑。
- Core memory: A type of memory that stores information on magnetically charged, doughnut shaped cores. Mass storage is currently mostly on magnetic disk ,drum, or taoe rather than core. 磁心贮记器:磁心像炸糖环的形状，存贮信息。它是磁化贮记器的一种。大量的信息存贮，现在多采用磁碟、碟鼓或磁带，用磁心贮记器较少。
- Core memory A type of memory that stores information on magnetically charged, doughnut shaped cores. Mass storage is currently mostly on magnetic disk, drum, or taoe rather than core. 磁心贮记器磁心像炸糖环的形状,存贮信息。它是磁化贮记器的一种。大量的信息存贮,现在多采用磁碟、碟鼓或磁带,用磁心贮记器较少。
- Meanwhile the relation of SNM and the gate width is also analyzed, which is consistent with the experiment. The design rules of VDSM SRAM memory cell are given. 文中同时分析了栅宽与 SNM的关系 ,其结论与实验结果一致 ,并给出了 VDSM SRAM存储单元设计中应注意的问题
- Based on the unified ferroelectric device model which is applied practically to the design, the 2T 2C configuration of the ferroelectric DRO memory cell is discussed in detail. 基于被应用于实际设计之中的统一的铁电器件模型，详细讨论了2T?2C组态的铁电破坏性读出存储器单元的设计。
- Physical addresses are used to address memory cells in memory chips. 物理地址是用来真正访问内存单元的地址。
