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- Accidental treatment rules for mechanical damage i. 港口机械机损事故处理规定。
- Gives catholic protection of local mechanical damage. 可提供局部机械破损的阴极保护。
- Provides catholic protection of partial mechanical damage. 可对局部破损区域提供阴极保护。
- Chemical mechanism of exotic weed invasion. 外来杂草入侵的化学机制
- It should conform to the specifications in Table 1. No mechanical damage. 符合表1规定无机械损伤。
- The wire must be free from contamination, rust and mechanical damage. 钢丝表面无污染,锈蚀和机械损伤。
- The wire must be free from contamination,rust and mechanical damage. 钢丝表面无污染;锈蚀和机械损伤.
- Split leather safety shoes；steel toecap and midsole；Good resistance to mechanical damage, abrasion,slip-proof.Apply to construction,chemical industry,iron and steel,transport,auto industry. 头层皮鞋面，聚氨酯鞋底；钢头和钢底；耐磨，防刺穿，防滑。头层皮鞋面，聚氨酯鞋底；钢头和钢底；耐磨，防刺穿，防滑。
- Chemical Mechanical Polishing (CMP) is the most effective way to achieve global planarization in semiconductor process. 化学机械抛光，是半导体制程中达到全域平坦化最有效的办法，同时也是众多制程中不可或缺的重要制程步骤。
- Chemical mechanical polishing (CMP) is the mostly used planarization process in the semiconductor industry today. 摘要:化学机械抛光是现在半导体产业中最常被使用的平坦化制程。
- Bachelor degree in Mechanical engineer or equivalent, preferred education background in Welding, Chemical Mechanical, NDT, Power Equipments, etc. 本科以上学历,机械背景,焊接,化工机械,无损检测,动力设备专业优先。
- "Vortexing" can cause unstable pump operation, vibration, pulsation and severe mechanical damage. “涡流”可能会导致泵运行不稳定、振动、跳动和严重的机械破坏。
- Diamond disk conditioners have long served the semiconductor chemical mechanical polishing (CMP) process for polish pad dressing. 摘要钻石修整器应用于化学机械抛光中抛光垫的修整，已有很长的一段时间。
- Chemical mechanical polishing (CMP) is the most effective method to achieve global planarization in semiconductor industry. 化学机械抛光，是目前半导体制程中达全域平坦化最有效的方式，同时也是许多制程中不可缺少的步骤。
- Erosion,corrosion or mechanical damage can cause local thinned area(LTA)in pipe and degrade its integrity. 管道在使用中受介质腐蚀或冲蚀作用以及机械损伤会发生局部减薄，降低使用的安全性。
- Boning, D., W. Moyne and T. Smith, “Run by Run Control of Chemical Mechanical Polishing,” IEEE Trans. CPMT (C), 19, 307-314 (1996). 周育乐，考虑制程使用时间之批次控制方法，台湾大学工业工程研究所硕士论文，台北，台湾(2000)。
- G. Corlett, “Targeting Water Use for Chemical Mechanical Polishing,” Solid State Technology, Vol. 43, No. 6, pp. 201-206 (2000). 蔡明莳，“化学机械研磨后清洗技术简介”，奈米通讯，第6卷，第1期，第21-27页（1999）。
- The results pave the way for studying mechanical damage of fruits and choosing reasonable parameters of cushion packaging. 以水蜜桃为研究对象,通过准静态压缩试验确定其压缩破坏临界变形量,并在临界变形量的范围内研究其峰值力松弛特性,建立水蜜桃动态松弛特性的三单元力学模型,结合实验数据进行模型表征。
- Both high material removal rate(MRR) and smooth surface have to be achieved in primary chemical mechanical polishing(CMP) of hard disk substrates. 硬盘盘基片粗抛光必须在较高材料去除率的基础上获得高表面质量。
- Stress concentrations can be created by mechanical damage that compromises the protective finishes and alters the compressive shot-peen layer. 机加工损伤对保护涂层的破坏和对喷丸压缩层的改变会造成应力腐蚀。
