您要查找的是不是：
- In the band structure, one band that is completely filled with electrons is termed valence band. 在能帶結構中,完全填滿電子的帶被稱為價帶。
- Solution of Kohn-Luttinger Hamiltonian Equation in Energy Representation for Valence Band Structures of Strain-compensated Multiple Quantum Wells 方程的能量表象求解方法
- Electronic structure analysis shows that the doping S could substantially lower the band gap of TiO_2 by the presence of an impurity state of S3p on the upper edge of valence band. 對TiO_(2-x)S_x的電子結構分析表明，其帶隙相對於未摻雜TiO_2有所減小，這是由S3p雜質態在價帶上邊沿的出現造成的。 可以推斷，由S3p雜質態到導帶的躍遷造成了實驗觀測到的S摻雜TiO_2吸收邊沿的紅移。
- Investigations of Semiconductor Band Structure Using High Pressure. 應用高壓對半導體鍵聯結構的研究。
- The reason is that their valence band is full of electrons, which obstructs current flow. 因為它們的價帶填滿了電子，使電流無法流動。
- The highest-energy band containing electrons is called the valence band, and the next higher one is the conduction band. 填有電子而能量最高的能帶稱為價帶，相鄰的更高能帶稱為導帶。
- Stir cylinder liner for the band structure, mixer body is long life. 攪拌筒為帶襯板結構,攪拌機架體使用壽命長。
- The upshift of valence band edge and the downshift of conduction band edge under tensile strain are responsible for that. 這是因為外加伸展應力使得矽的價電帶往上移動以及導電帶向下移動造成。
- This program calculates the 2D photonic Band Structure with PWE method. (譯)：此程序計算了二維光子帶結構PWE方法。
- The interface states and valence band offsets of Si/GaAs heterojunction have been studiedby the self-consistent EHT method. 本文報道用自洽EHT方法研究Si/GaAs異質結界面態分佈和價帶不連續性。
- Two Dimensional Photonic Band Structure: Triangular Non Bravais Lattice[J]. 引用該論文 金崇君;秦柏;楊森;秦汝虎.
- The upshift of valence band edge under mechanical strain increases the majority hole concentration at the oxide/Si interface. 價電帶的向上移動會使得氧化層以及矽的接面的電洞濃度增加。
- The Gray-Brown method has been performed to measure Si/SiO_2 interface state density D(?) near conduct and valence band, also the average interface state density Dit. 本工作建立了能準確測量MOS電容禁帶兩端界面態密度分佈和平均界面態密度的Gray-Brown法(簡稱G-B法),並同高低頻C-V法進行了比較,結合Stretch Out(簡稱S-O)法研究了不同工藝MOS電容的輻照感生界面態特性。
- It is suggested that the 1.447eV and 1.32eV PL emis-sions are caused by the double acceptors Ga_(As), with levels 78meV and 203meV above the valence band, respectively. 認為1.;447eV和1
- Wave vector resolved surface densities of states and band structure along the surface Brillouin zone are presented. 採用層軌道表象及表面投影技術 ;給出了 (313)表面在二維布里淵區高對稱點的波矢分辯的電子態密度和表面投影能帶結構 .
- Chuang. This kind band structure can be chose n as an active layer of 980nm pump lase r for optical com -munications. Chuang提出的傳遞矩陣法,計算了量子阱中不同Ga組分的GaxIn1-xAs/GaInAsP應變數子阱結構的能帶,該結構可被選作980nm光通信泵浦激光器的有源層。
- Band structure, transmissions and reflections are calculated which indicate the Brewster angle phenomenon. 首先研究了一維台階體系的能帶、透射及反射,指出液體表面波中布儒斯特角的存在是難以實現全方位反射的原因。
- While the cycling performance of the anode can improve due to the structural stabilization of the material Li 5Mn 7CoO 8 corresponding to the decrease of the valence band width and enhancement of the Co-O bond. 同時由於價帶寬度變窄 ;Co-O鍵間的相互作用比Mn -O鍵間的相互作用強 ;所以 ;結構穩定性增加 ;電極循環性能改善 .
- Band structure of the photonic crystals shows that there exists a partial bandgap. 通過分析這種光子晶體的能帶結構，顯示其存在部分帶隙。
- The absorption edge increases as the amount of fluorine is raised. The optical energy gap E g is mainly determined by CF bond in the films, which results in the change of the density of states in band tail of the valence band. 薄膜中氟的引入對吸收邊和光學帶隙產生較大的影響 ,吸收邊隨氟含量的提高而增大 ,光學帶隙則主要取決於CF鍵的含量 ,是由於強電負性F的引入改變了價帶帶尾附近帶隙中態密度的結果所至
