Although the energy bandgap can be reduced in the dilute InGaAsN channel, the InGaAsN material must be growth in low temperatures. 雖然在砷化銦鎵的材料中加入微量氮元素可以使其能隙下降，然而四元氮砷化銦鎵材料卻必須在低溫下成長。
His currente research will focus more onw ide gap semiconductor MOCVD growth, inter disciplinary materials investigation and nano-scalehdevice Network evelopment. 現在的研究課題主要是著重在寬能隙半導體金屬氧化物化學氣相磊晶的成長，多學科材料研究及奈米器件研發。
The influence of quantum interferences on the narrow spontaneous line decreases as the forbidden gap and the detuning of the upper levels from the edges of the gap increase. 量子相干對自發輻射線的影響隨著禁帶寬度和上能級與帶隙邊緣距離增加而變小。
The influence of quantum interferences on the narrow spontaneous line decreases as the forbidden gap and the detuning of the upper levels from the edges of the gap increase. 量子相干對自發輻射線的影響隨著禁帶寬度和上能級與帶隙邊緣距離增加而變小。
