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- The simulation analysis indicates that with this structure the avalanche breakdown voltage of RF power transistors can be increased to be over 90% of that for an ideal parallel . 模拟分析表明,采用该结构,器件的雪崩击穿电压能提高到理想平行平面结的90%25以上,器件的大电流特性和频率特性也有所改进。
- An Analysis of GAT?s Compatibility Between High Current Gain and High Avalanche Breakdown Voltage GAT实现高电流增益与高雪崩击穿电压兼容特性分析
- avalanche breakdown voltage 雪崩哗电压
- What was known as avalanche breakdown occurred. 通常所谓的雪崩式击穿现象爆发了。
- Features: High breakdown voltage, low output capacitance, high fT. 特点:高击穿电压,低输出电容,特征频率高。
- Purpose: Color TV chroma output and high breakdown voltage driver. 用途:用于彩电行输出和高击穿电压驱动。
- Features: High breakdown voltage, excellent current characteristics. 特点:击穿电压高,电流特性好。
- Test results show that the corona's onset and breakdown voltage both rise with increasing OD of the nozzle. 结果表明:喷嘴外径增大,起晕电压和击穿电压升高。
- In this paper, the area contact model of depletion layer width under avalanche breakdown in Si epitaxial wafer by a three-probe method is analysed. The theory accords with experimental results. 本文分析了三探针测试硅外延片中雪崩击穿时耗尽层宽度的面接触模型,理论和实验结果吻合。
- The clamping snubber circuit was set to the rated breakdown voltage of the MOSFET (600 V and 800 respectively). 钳位缓冲电路被设定在场效应晶体管的额定击穿电压上(分别为600伏特和800伏特)。
- Simulation result shows that nearly 100% breakdown voltage of the plane junction can be realized. 模拟结果显示,该结构可以使射频功率双极性晶体管的击穿电压几乎100%25达到平行平面结的理想值。
- If the critical reverse breakdown voltage is exceeded, a destructive breakdown occurs. 如果超过临界反向击穿电压,就会发生破坏性的击穿。
- This paper investigates the DC breakdown voltage in the two-phase mixture that is composed of air and mist. 研究了空气和雾组成的气液混合两相体在球-球电极中的直流击穿电压。
- Two important features of high-voltage (HV) devices are a low on-resistance (Ron) and a high breakdown voltage (VBV). 高压元件所追求的两个主要特性即:低的导通电阻及高的崩溃电压。
- Features: High breakdown voltage, low collector saturation voltage, high speed switching. 特点:击穿电压高,饱和压降低,开关速度快。
- avalanche breakdown semiconductor laser 雪崩式半导体激光器
- The deposition rate,morphologies,breakdown voltage and refractive index were studied. 研究了制备工艺对薄膜沉积速率、表面形貌、折射率和电击穿场强的影响。
- The result showed that burying sintering process may make breakdown voltage smaller and apparen. 结果表明,采取粉料埋烧可以明显降低压敏电压、提高介电常数。
- Test Method for Dielectric Breakdown Voltage and Dielectric Strength of Solid Electrical Insulating Materials at Commercial Power Frequencies (10. 固体电绝缘材料在工业电源频率下的介电击穿电压和介电强度的试验方法(10。
- The field limting ring (FLR) termination structure theory is analysed, the related factors that influence breakdown voltage are summarized. 分析了场限环结构原理;总结了影响击穿电压的相关因素.