To overcome this problem, the conductive poly-Si is replaced by discrete trapping nitride to form the [poly-Si or metal gate]-SiO2-SiN-SiO2-Si SONOS or MONOS memory.

• 其主要原因为反覆的编码和抹除过程将会对穿遂氧化层造成应力而产生缺陷，这些缺陷可能形成漏电路径而导致多晶矽全面性的漏电。