Therefore, the Dill exposure model and Mack development model are improved, so that they are suitable for the simulation of thick resist lithography.

• 针对厚层抗蚀剂显影参数随抗蚀剂厚度变化的特点以及在显影过程中出现的表面抑制效应现象，改进了原有的显影模型。 建立了适用于厚层抗蚀剂光刻的成像新模型。