The results show that compared with the pure oxide gate dielectrics of the same EOT,N/O stack gate dielectrics have much better performance on the aspects of tunneling leakage current,SILC characteristics,and gate dielectrics lifetime.

• 结果表明 ；同样EOT的Si3 N4/SiO2 stack栅介质和纯SiO2 栅介质比较 ；前者在栅隧穿漏电流、抗SILC性能、栅介质寿命等方面都远优于后者 .