The low-level ESD stresses were imposed on microwave low noise transistor 2SC3356 using the HBM from CB(collector-base) junctions and EB(emitter-base) junctions.

• 分别从CB结和EB结对2SC3356晶体管施加低电压HBM的ESD应力,结果表明:从CB结施加低电压的ESD电应力,所产生的潜在失效的几率要高于从EB结施加低电压的ESD电应力产生的潜在失效几率,即CB结比EB结对低电压的ESD应力引入的潜在失效更为敏感。