The device used in the experiments only differs from common TFTs in the gate configuration.In order to allow gas reactions with the SnO2-surface, the gate is buried under the semiconducting layer.

• 并使用此数学模型，找出元件定电流加压测试之后在通道到汲极、源极之间，较容易产生损坏的地方，也就是缺陷陷阱产生之位置。